The role of electronic affinity for dopants in thermoelectric transport properties of InTe
文献类型：期刊论文
| 作者 | Zhu, Huaxing2; Wang, Guiwen1; Wang, Guoyu3 ; Zhou, Xiaoyuan1,2; Lu, Xu2
|
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2021-07-15 |
| 卷号 | 869页码:6 |
| 关键词 | Thermoelectric InTe Electronic affinity Anisotropy Doping Ionized impurity scattering |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2021.159224 |
| 通讯作者 | Zhou, Xiaoyuan(xiaoyuan2013@cqu.edu.cn) ; Lu, Xu(luxu@cqu.edu.cn) |
| 英文摘要 | We investigate the anisotropy in thermoelectric transport properties of pristine and self-doped InTe after spark plasma sintering and ascribe the observed weak anisotropy to the lack in orientation preference of investigated specimens as characterized by the scanning electron microscope. Then, the effect of Cu/Na doping on the transport properties of InTe is discussed for comparison, which suggests Cu doping is more favorable for keeping decent carrier mobility than Na doping and In-deficiency. Such difference is qualitatively explained by the large electronic affinity of Cu as compared to Na, which can effectively weaken the Coulomb scattering for charge carriers. Finally, a maximum figure of merit zT of about 0.73 at 730 K is obtained for the compound with the nominal composition of In0.99Cu0.01Te, measured parallel to the pressing direction, which can be attributed to the enhanced carrier concentration and well-maintained mobility compared to the pristine specimen. Furthermore, the Cu-doped specimen shows a superior average zT about 0.34, more than 35% enhancement than that for both Na-doped and self-doped InTe compounds. Our results should provide a guidance for selecting dopants for thermoelectric materials that possess strong ionized-impurity scattering character. (C) 2021 Elsevier B.V. All rights reserved. |
| 资助项目 | National Natural Science Foundation of China[51772035] ; National Natural Science Foundation of China[11674040] ; National Natural Science Foundation of China[11874356] ; Chongqing Entrepreneurship and Innovation Program for the Returned Overseas Chinese Scholars[cx2019002] ; Chongqing Graduate Tutor Team Construction Project[ydstd1832] |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000638274800016 |
| 出版者 | ELSEVIER SCIENCE SA |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/13568]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Zhou, Xiaoyuan; Lu, Xu |
| 作者单位 | 1.Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China 2.Chongqing Univ, Coll Phys, Chongqing Key Lab Soft Condensed Matter Phys & Sm, Chongqing 401331, Peoples R China 3.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, Huaxing,Wang, Guiwen,Wang, Guoyu,et al. The role of electronic affinity for dopants in thermoelectric transport properties of InTe[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2021,869:6. |
| APA | Zhu, Huaxing,Wang, Guiwen,Wang, Guoyu,Zhou, Xiaoyuan,&Lu, Xu.(2021).The role of electronic affinity for dopants in thermoelectric transport properties of InTe.JOURNAL OF ALLOYS AND COMPOUNDS,869,6. |
| MLA | Zhu, Huaxing,et al."The role of electronic affinity for dopants in thermoelectric transport properties of InTe".JOURNAL OF ALLOYS AND COMPOUNDS 869(2021):6. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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