Rational design for high-yield monolayer WS2 films in confined space under fast thermal processing
文献类型：期刊论文
| 作者 | Shen,Jun2 ; Yan,Jiangbing2,3; Zhan,Li2; Wu,Chuanqiang1; Ge,Binghui1; Wang,Xu2; Wang,Hongbing4; Cui,Qilong5; Yang,Dong3; Zhang,Hongling3
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| 刊名 | Nanotechnology
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| 出版日期 | 2021-09-21 |
| 卷号 | 32期号:50 |
| ISSN号 | 0957-4484 |
| 关键词 | monolayer WS2 high-efficient synthesis multi-nucleation dynamic process crystalline structure optoelectronics |
| DOI | 10.1088/1361-6528/ac23f8 |
| 通讯作者 | Zhan,Li() |
| 英文摘要 | Abstract Tungsten Disulfide (WS2) films, as one of the most attractive members in the family of transition metal dichalcogenides, were synthesized typically on SiO2/Si substrate by confine-spaced chemical vapor deposition method. The whole process could be controlled efficiently by precursor concentration and fast thermal process. To be priority, the effect of fast heating-up to cooling-down process and source ratio-dependent rule for WS2 structure have been systematically studied, leading to high-yield and fine structure of monolayer WS2 films with standard triangular morphology and average edge length of 92.4 μm. The growth time of the samples was regulated within 3 min, and the optimal source ratio of sulfur to tungsten oxide is about 200:3. The whole experimental duration was about 50 min, which is only about quarter in comparison to relevant reports. We assume one type of ‘multi-nucleation dynamic process’ to provide a potential way for fast synthesis of the samples. Finally, the good performance of as-fabricated field-effect transistor on WS2 film was achieved, which exhibits high electron mobility of 4.62 cm2 V?1 s?1, fast response rate of 42 ms, and remarkable photoresponsivity of 3.7?×?10–3 A W?1. Our work will provide a promising robust way for rapid synthesis of high-quality monolayer TMDs films and pave the way for the potential applications of TMDCs. |
| 语种 | 英语 |
| 出版者 | IOP Publishing |
| WOS记录号 | IOP:0957-4484-32-50-AC23F8 |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/13955]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Zhan,Li |
| 作者单位 | 1.Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Anhui, Hefei 230601, People’s Republic of China 2.Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People’s Republic of China 3.School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun, Jilin 130022, People’s Republic of China 4.Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, People’s Republic of China 5.Univ Sci & Technol China, Natl Synchrotron Radiat Lab, CAS Ctr Excellence Nanosci, Anhui, Hefei 230029, People’s Republic of China |
| 推荐引用方式 GB/T 7714 | Shen,Jun,Yan,Jiangbing,Zhan,Li,et al. Rational design for high-yield monolayer WS2 films in confined space under fast thermal processing[J]. Nanotechnology,2021,32(50). |
| APA | Shen,Jun.,Yan,Jiangbing.,Zhan,Li.,Wu,Chuanqiang.,Ge,Binghui.,...&Cui,Hengqing.(2021).Rational design for high-yield monolayer WS2 films in confined space under fast thermal processing.Nanotechnology,32(50). |
| MLA | Shen,Jun,et al."Rational design for high-yield monolayer WS2 films in confined space under fast thermal processing".Nanotechnology 32.50(2021). |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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