Gate modulation enhanced position-sensitive detectors using graphene/silicon-on-insulator structure
文献类型：期刊论文
| 作者 | Jiang, Hao1,2 ; Fu, Jintao2,3; Nie, Changbin2,3; Sun, Feiying2; Tang, Linlong2; Sun, Jiuxun1; Zhu, Meng4; Shen, Jun2; Feng, Shuanglong2; Shi, Haofei2
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| 刊名 | CARBON
 |
| 出版日期 | 2021-10-30 |
| 卷号 | 184页码:445-451 |
| ISSN号 | 0008-6223 |
| 关键词 | Graphene Silicon-on-insulator Position-sensitive detector Gate manipulation |
| DOI | 10.1016/j.carbon.2021.08.041 |
| 通讯作者 | Sun, Jiuxun(sjx@uestc.edu.cn) ; Shi, Haofei(shi@cigit.ac.cn) ; Wei, Xingzhan(weixingzhan@cigit.ac.cn) |
| 英文摘要 | In this paper, a position-sensitive detector (PSD) with an enhanced position detection performance has been proposed using graphene-silicon-on-insulator (GSOI) structure. By introducing the gate manipulation, the separation efficiency and diffusion speed of the photo-induced charges have been greatly improved. We experimentally observe a 10-fold increase in the generated photocurrent and the response time is shorten by around 8 times, compared to the counterpart without modulation. High position sensitivity (518 mu A/mm) to weak-light-sensing, long-distance-sensing (1.2 mm) and good linearity (nonlinearity <2%) are also achieved. The proposed device concept also provides a guidance to improve the performance of other kind of two-dimensional materials based PSDs. (C) 2021 Elsevier Ltd. All rights reserved. |
| 资助项目 | National Key R&D Program of China[2017YFE0131900] ; Natural Science Foundation of Chongqing, China[cstc2019jcyjjqX0017] |
| WOS研究方向 | Chemistry ; Materials Science |
| 语种 | 英语 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| WOS记录号 | WOS:000701949400007 |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/14122]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Sun, Jiuxun; Shi, Haofei; Wei, Xingzhan |
| 作者单位 | 1.Univ Elect Sci & Technol China, Sch Phys, Chengdu 610054, Peoples R China 2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.TianJin Jinhang Inst Tech Phys, Tianjin 300192, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jiang, Hao,Fu, Jintao,Nie, Changbin,et al. Gate modulation enhanced position-sensitive detectors using graphene/silicon-on-insulator structure[J]. CARBON,2021,184:445-451. |
| APA | Jiang, Hao.,Fu, Jintao.,Nie, Changbin.,Sun, Feiying.,Tang, Linlong.,...&Wei, Xingzhan.(2021).Gate modulation enhanced position-sensitive detectors using graphene/silicon-on-insulator structure.CARBON,184,445-451. |
| MLA | Jiang, Hao,et al."Gate modulation enhanced position-sensitive detectors using graphene/silicon-on-insulator structure".CARBON 184(2021):445-451. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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