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Self-catalyst beta-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors

文献类型：期刊论文

作者Wu, Yutong1,2; Feng, Shuanglong2,3; Zhang, Miaomiao2,3; Kang, Shuai2; Zhang, Kun1,2; Tao, Zhiyong4; Fan, Yaxian4; Lu, Wenqiang2,3
刊名RSC ADVANCES
出版日期2021-08-31
卷号11期号:45页码:28326-28331
DOI10.1039/d1ra04663b
通讯作者Fan, Yaxian(yxfan@guet.edu.cn) ; Lu, Wenqiang(wqlu@cigit.ac.cn)
英文摘要Monoclinic gallium oxide (beta-Ga2O3) is a super-wide bandgap semiconductor with excellent chemical and thermal stability, which is an ideal candidate for detecting deep ultraviolet (DUV) radiation (100-280 nm). The growth of beta-Ga2O3 is challenging and most methods require Au as the catalyst and a long reacting time (more than 1 hour). In this work, the self-catalyst beta-Ga2O3 lateral nanowire networks were synthesized on an insulating substrate rapidly by a simple low-cost Chemical Vapor Deposition (CVD) method. A thin film of beta-Ga2O3 nanowire networks was synthesized within a reacting time of 15 minutes, which possesses a huge possibility for the rapid growth of beta-Ga2O3 metal oxide nanowires networks and application in the future solar-blind photodetector. MSM (metal-semiconductor-metal) photodetectors based on the beta-Ga2O3 nanowire networks revealed fast response (on-off ratios is about 10(3)), which is attributed to the unique cross-junction barrier-dominated conductance of the nanowire networks. In addition, the self-catalyst beta-Ga2O3 nanowires grown on insulating SiO2 are achieved and could be expected to find important applications in a bottom-up way of fabricating the next generation semiconductor nanoelectronics.
资助项目Dean Project of Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing[GXKL06190104] ; Dean Project of Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing[GXKL06190105] ; National Natural Science Foundation of China[12064005] ; Western Light Program of the Chinese Academy of Sciences ; Youth Innovation Promotion Association of the Chinese Academy of Sciences[2019374]
WOS研究方向Chemistry
语种英语
WOS记录号WOS:000694655300052
出版者ROYAL SOC CHEMISTRY
源URL[http://119.78.100.138/handle/2HOD01W0/14251]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Fan, Yaxian; Lu, Wenqiang
作者单位1.Harbin Engn Univ, Key Lab Fiber Integrated Opt, Minist Educ China, Harbin 150001, Peoples R China
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.Guangxi Key Lab Wireless Wideband Commun & Signal, Guilin 541004, Peoples R China
推荐引用方式
GB/T 7714		 Wu, Yutong,Feng, Shuanglong,Zhang, Miaomiao,et al. Self-catalyst beta-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors[J]. RSC ADVANCES,2021,11(45):28326-28331.
APA Wu, Yutong.,Feng, Shuanglong.,Zhang, Miaomiao.,Kang, Shuai.,Zhang, Kun.,...&Lu, Wenqiang.(2021).Self-catalyst beta-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors.RSC ADVANCES,11(45),28326-28331.
MLA Wu, Yutong,et al."Self-catalyst beta-Ga2O3 semiconductor lateral nanowire networks synthesis on the insulating substrate for deep ultraviolet photodetectors".RSC ADVANCES 11.45(2021):28326-28331.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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