Band convergence and thermoelectric performance enhancement of InSb via Bi doping
文献类型：期刊论文
| 作者 | Zhang, Xiong3; Lu, Wei3; Zhang, Yu3; Gu, Haoshuang6; Zhou, Zizhen5; Han, Guang4; Zhang, Bin2; Wang, Guoyu1 ; Zhou, Xiaoyuan2,5
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| 刊名 | INTERMETALLICS
 |
| 出版日期 | 2021-12-01 |
| 卷号 | 139页码:8 |
| 关键词 | Thermoelectric InSb Electrical properties optimization Bipolar effect Power factor enhancement |
| ISSN号 | 0966-9795 |
| DOI | 10.1016/j.intermet.2021.107347 |
| 通讯作者 | Zhang, Bin(xinyun2017@cqu.edu.cn) ; Wang, Guoyu(guoyuw@cigit.ac.cn) |
| 英文摘要 | The thermoelectric performance of InSb has been significantly improved via defect engineering or nanostructuring to reduce thermal conductivity in the past decade; however, less attention has been paid to improve its electrical properties via other key factors, e.g., carrier scattering mechanism, bipolar effect, etc. Here, we show that Bi doping on the Sb site not only significantly suppresses the high-temperature bipolar effect, but also leads to band convergence which enhances the Seebeck coefficient. As a result, a maximum zT of similar to 0.43 @ 675 K is achieved in InSb0.97B0.03, which is increased by similar to 43% as compared to that of pure InSb. In addition, the comparison of Bi and Ga doping (J. Mater. Chem., 2011, 21, 12398-12401) on the low-temperature electrical transport properties reveals that Bi doping is more beneficial for achieving high power factor due to the mixed acoustic phonon and ionized impurity scattering. Finally, it is suggested that Bi should be an effective dopant for electrical optimization of InSb and a further experiment on co-doping of Ga and Bi will be a considerable alternative for thermoelectric performance enhancement of InSb-based materials. |
| 资助项目 | National Natural Science Foundation of China[11874356] ; National Natural Science Foundation of China[52071041] ; National Natural Science Foundation of China[11904039] ; National Natural Science Foundation of China[51972102] ; Project for Fundamental and Frontier Research in Chongqing[cstc2019jcyjjqX0002] ; Project for Fundamental and Frontier Research in Chongqing[cstc2020jcyj-msxmX0777] ; Hubei Provincial Natural Science Foundation of China[2020CFB454] |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000706176400001 |
| 出版者 | ELSEVIER SCI LTD |
| 源URL | [http://119.78.100.138/handle/2HOD01W0/14268]  |
| 专题 | 中国科学院重庆绿色智能技术研究院 |
| 通讯作者 | Zhang, Bin; Wang, Guoyu |
| 作者单位 | 1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China 2.Chongqing Univ, Analyt & Testing Ctr, Chongqing 401331, Peoples R China 3.Hubei Normal Univ, Coll Phys & Elect Sci, Huangshi 435002, Hubei, Peoples R China 4.Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China 5.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China 6.Hubei Univ, Fac Phys & Elect Sci, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Hubei Key Lab Ferro & Piezoelect Mat & Devices, Wuhan 430062, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Xiong,Lu, Wei,Zhang, Yu,et al. Band convergence and thermoelectric performance enhancement of InSb via Bi doping[J]. INTERMETALLICS,2021,139:8. |
| APA | Zhang, Xiong.,Lu, Wei.,Zhang, Yu.,Gu, Haoshuang.,Zhou, Zizhen.,...&Zhou, Xiaoyuan.(2021).Band convergence and thermoelectric performance enhancement of InSb via Bi doping.INTERMETALLICS,139,8. |
| MLA | Zhang, Xiong,et al."Band convergence and thermoelectric performance enhancement of InSb via Bi doping".INTERMETALLICS 139(2021):8. |
入库方式： OAI收割
来源：重庆绿色智能技术研究院
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