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Dendritic WS2 Nanocrystal-Coated Monolayer WS2 Nanosheet Heterostructures for Phototransistors

文献类型：期刊论文

作者Zhan, Li2,3; Shen, Jun2,3; Yan, Jiangbing2; Yan, Ruiyang2,3; Zhang, Xiaoxian5; Long, Mingsheng4; Liu, Zheng1; Wang, Xu2; Fu, Shaohua5; Zhang, Li4
刊名ACS APPLIED NANO MATERIALS
出版日期2021-10-22
卷号4期号:10页码:11097-11104
ISSN号2574-0970
关键词dendritic WS2 APCVD 2D materials phototransistor heterostructures
DOI10.1021/acsanm.1c02568
通讯作者Shen, Jun(juns@cigit.ac.cn) ; Zhang, Xiaoxian(zhxiaoxian@bjtu.edu.cn) ; Liu, Zheng(z.liu@ntu.edu.cg)
英文摘要Two-dimensional tungsten disulfide (WS2), as one of the widely concerned members of the transition metal dichalcogenides family, has been studied broadly by its outstanding photonic and electronic properties. Since all of the research works focus on size and the number of layers, the dendritic structure WS2 has been scarcely reported. In our study, we make use of atmospheric pressure chemical vapor deposition (APCVD) to control the synthesis of dendritic WS2/monolayer WS2 heterostructures on the SiO2/Si substrate. The stacking morphology of the heterostructure is verified by AFM, Raman, and PL spectra. The effects of growth times and carrier gas flux on the quasi-epitaxial growth of WS2 films with dendritic structures have been systematically studied. In addition, the transition between fractal, dendritic, and compact morphologies with the increase of the growth times (carrier gas flux) are more significant. The compact morphology and difference of contact potential between the adjacent dendritic structures are characterized by Kelvin probe force microscopy (KPFM). Moreover, the as-fabricated FET devices exhibit excellent electronic properties (on/off ratio, carrier mobility, photoresponsivity, and response time are about 106, 11.42 cm(2) V-1S1-, 46.6 mA/W, and 105.5 mu s, respectively). This study paves the way for the rational design of high-sensitivity fractal-enhanced phototransistor devices for industrial and commercial applications.
资助项目Science and Technology Service Network Initiative of the Chinese Academy of Sciences[KFJ-STS-QYZD-179] ; Science and Technology Service Network Initiative of the Chinese Academy of Sciences[KFJ-STS-QYZD-123] ; State Key Laboratory of Luminescence and Applications[SKLA-2021-03] ; State Key Laboratory of Luminescence and Applications[Y79H030]
WOS研究方向Science & Technology - Other Topics ; Materials Science
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000711030600114
源URL[http://119.78.100.138/handle/2HOD01W0/14442]  
专题中国科学院重庆绿色智能技术研究院
通讯作者Shen, Jun; Zhang, Xiaoxian; Liu, Zheng
作者单位1.Nanyang Technol Univ, Ctr Programmable Mat, Sch Mat Sci & Engn, Singapore 639798, Singapore
2.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
4.Anhui Univ, Key Lab Struct & Funct Regulat Hybrid Mat, Informat Mat & Intelligent Sensing Lab Anhui Prov, Minist Educ,Inst Phys Sci & Informat Technol, Hefei 230601, Anhui, Peoples R China
5.Beijing Jiaotong Univ, Inst Optoelect Technol, Key Lab Luminescence & Opt Informat, Minist Educ, Beijing 100044, Peoples R China
推荐引用方式
GB/T 7714		 Zhan, Li,Shen, Jun,Yan, Jiangbing,et al. Dendritic WS2 Nanocrystal-Coated Monolayer WS2 Nanosheet Heterostructures for Phototransistors[J]. ACS APPLIED NANO MATERIALS,2021,4(10):11097-11104.
APA Zhan, Li.,Shen, Jun.,Yan, Jiangbing.,Yan, Ruiyang.,Zhang, Xiaoxian.,...&Zhang, Xin.(2021).Dendritic WS2 Nanocrystal-Coated Monolayer WS2 Nanosheet Heterostructures for Phototransistors.ACS APPLIED NANO MATERIALS,4(10),11097-11104.
MLA Zhan, Li,et al."Dendritic WS2 Nanocrystal-Coated Monolayer WS2 Nanosheet Heterostructures for Phototransistors".ACS APPLIED NANO MATERIALS 4.10(2021):11097-11104.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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