Rectification behavior of polarization effect induced type-II n-GaN/n-type β-Ga2O3 isotype heterojunction grown by metal organic vapor phase epitaxy
文献类型：期刊论文
| 作者 | Weijiang Li; Xiang Zhang; Jie Zhao; Jianchang Yan; Zhiqiang Liu; Junxi Wang; Jinmin Li; Tongbo Wei |
| 刊名 | JOURNAL OF APPLIED PHYSICS
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| 出版日期 | 2020 |
| 卷号 | 127期号:1页码:015302 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30640]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Weijiang Li; Xiang Zhang; Jie Zhao; Jianchang Yan; Zhiqiang Liu; Junxi Wang; Jinmin Li; Tongbo Wei. Rectification behavior of polarization effect induced type-II n-GaN/n-type β-Ga2O3 isotype heterojunction grown by metal organic vapor phase epitaxy[J]. JOURNAL OF APPLIED PHYSICS,2020,127(1):015302. |
| APA | Weijiang Li; Xiang Zhang; Jie Zhao; Jianchang Yan; Zhiqiang Liu; Junxi Wang; Jinmin Li; Tongbo Wei.(2020).Rectification behavior of polarization effect induced type-II n-GaN/n-type β-Ga2O3 isotype heterojunction grown by metal organic vapor phase epitaxy.JOURNAL OF APPLIED PHYSICS,127(1),015302. |
| MLA | Weijiang Li; Xiang Zhang; Jie Zhao; Jianchang Yan; Zhiqiang Liu; Junxi Wang; Jinmin Li; Tongbo Wei."Rectification behavior of polarization effect induced type-II n-GaN/n-type β-Ga2O3 isotype heterojunction grown by metal organic vapor phase epitaxy".JOURNAL OF APPLIED PHYSICS 127.1(2020):015302. |
入库方式： OAI收割
来源：半导体研究所
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