High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture
文献类型：期刊论文
| 作者 | Fuyou Liao; Zhongxun Guo; Yin Wang; Yufeng Xie; Simeng Zhang; Yaochen Sheng; Hongwei Tang; Zihan Xu; Antoine Riaud; Peng Zhou; Jing Wan; Michael S. Fuhrer; Xiangwei Jiang; David Wei Zhang; Yang Chai; Wenzhong Bao |
| 刊名 | ACS APPLIED ELECTRONIC MATERIALS
 |
| 出版日期 | 2020 |
| 卷号 | 2期号:1页码:111-119 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30714]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Fuyou Liao; Zhongxun Guo; Yin Wang; Yufeng Xie; Simeng Zhang; Yaochen Sheng; Hongwei Tang; Zihan Xu; Antoine Riaud; Peng Zhou; Jing Wan; Michael S. Fuhrer; Xiangwei Jiang; David Wei Zhang; Yang Chai; Wenzhong Bao. High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture[J]. ACS APPLIED ELECTRONIC MATERIALS,2020,2(1):111-119. |
| APA | Fuyou Liao; Zhongxun Guo; Yin Wang; Yufeng Xie; Simeng Zhang; Yaochen Sheng; Hongwei Tang; Zihan Xu; Antoine Riaud; Peng Zhou; Jing Wan; Michael S. Fuhrer; Xiangwei Jiang; David Wei Zhang; Yang Chai; Wenzhong Bao.(2020).High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture.ACS APPLIED ELECTRONIC MATERIALS,2(1),111-119. |
| MLA | Fuyou Liao; Zhongxun Guo; Yin Wang; Yufeng Xie; Simeng Zhang; Yaochen Sheng; Hongwei Tang; Zihan Xu; Antoine Riaud; Peng Zhou; Jing Wan; Michael S. Fuhrer; Xiangwei Jiang; David Wei Zhang; Yang Chai; Wenzhong Bao."High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture".ACS APPLIED ELECTRONIC MATERIALS 2.1(2020):111-119. |
入库方式： OAI收割
来源：半导体研究所
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