Schottky-barrier modulation at germanium/monolayer MoS2 heterojunction interface: the roles of passivation and interfacial layer
文献类型：期刊论文
| 作者 | Xiaolei Ma; Xiangwei Jiang; Yuan Li; Jiezhi Chen |
| 刊名 | APPLIED PHYSICS EXPRESS
 |
| 出版日期 | 2020 |
| 卷号 | 13期号:2页码:021004 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30605]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Xiaolei Ma; Xiangwei Jiang;Yuan Li; Jiezhi Chen. Schottky-barrier modulation at germanium/monolayer MoS2 heterojunction interface: the roles of passivation and interfacial layer[J]. APPLIED PHYSICS EXPRESS,2020,13(2):021004. |
| APA | Xiaolei Ma; Xiangwei Jiang;Yuan Li; Jiezhi Chen.(2020).Schottky-barrier modulation at germanium/monolayer MoS2 heterojunction interface: the roles of passivation and interfacial layer.APPLIED PHYSICS EXPRESS,13(2),021004. |
| MLA | Xiaolei Ma; Xiangwei Jiang;Yuan Li; Jiezhi Chen."Schottky-barrier modulation at germanium/monolayer MoS2 heterojunction interface: the roles of passivation and interfacial layer".APPLIED PHYSICS EXPRESS 13.2(2020):021004. |
入库方式： OAI收割
来源：半导体研究所
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