Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High- κ MOSFETs
文献类型：期刊论文
| 作者 | Feilong Liu; Yue-Yang Liu; Ling Li; Guofu Zhou; Xiangwei Jiang; Jun-Wei Luo |
| 刊名 | PHYSICAL REVIEW APPLIED
 |
| 出版日期 | 2020 |
| 卷号 | 13期号:2页码:024020 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30600]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Feilong Liu; Yue-Yang Liu; Ling Li; Guofu Zhou; Xiangwei Jiang; Jun-Wei Luo. Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High- κ MOSFETs[J]. PHYSICAL REVIEW APPLIED,2020,13(2):024020. |
| APA | Feilong Liu; Yue-Yang Liu; Ling Li; Guofu Zhou; Xiangwei Jiang; Jun-Wei Luo.(2020).Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High- κ MOSFETs.PHYSICAL REVIEW APPLIED,13(2),024020. |
| MLA | Feilong Liu; Yue-Yang Liu; Ling Li; Guofu Zhou; Xiangwei Jiang; Jun-Wei Luo."Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High- κ MOSFETs".PHYSICAL REVIEW APPLIED 13.2(2020):024020. |
入库方式： OAI收割
来源：半导体研究所
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