MBE growth of high quality AlInSb/GaSb compound buffer layers on GaAs substrates
文献类型：期刊论文
| 作者 | Yong Li; Xiaoming Li; Ruiting Hao; Jie Guo; Yunpeng Wang; Abuduwayiti Aierken; Yu Zhuang; Faran Chang; Kang Gu; Guoshuai Wei; Xiaole Ma; Guowei Wang; Yingqiang Xu ; Zhichuan Niu |
| 刊名 | OPTICAL AND QUANTUM ELECTRONICS
 |
| 出版日期 | 2020 |
| 卷号 | 52期号:3页码:138 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30684]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Yong Li; Xiaoming Li; Ruiting Hao; Jie Guo; Yunpeng Wang; Abuduwayiti Aierken; Yu Zhuang; Faran Chang; Kang Gu; Guoshuai Wei; Xiaole Ma; Guowei Wang; Yingqiang Xu ; Zhichuan Niu. MBE growth of high quality AlInSb/GaSb compound buffer layers on GaAs substrates[J]. OPTICAL AND QUANTUM ELECTRONICS,2020,52(3):138. |
| APA | Yong Li; Xiaoming Li; Ruiting Hao; Jie Guo; Yunpeng Wang; Abuduwayiti Aierken; Yu Zhuang; Faran Chang; Kang Gu; Guoshuai Wei; Xiaole Ma; Guowei Wang; Yingqiang Xu ; Zhichuan Niu.(2020).MBE growth of high quality AlInSb/GaSb compound buffer layers on GaAs substrates.OPTICAL AND QUANTUM ELECTRONICS,52(3),138. |
| MLA | Yong Li; Xiaoming Li; Ruiting Hao; Jie Guo; Yunpeng Wang; Abuduwayiti Aierken; Yu Zhuang; Faran Chang; Kang Gu; Guoshuai Wei; Xiaole Ma; Guowei Wang; Yingqiang Xu ; Zhichuan Niu."MBE growth of high quality AlInSb/GaSb compound buffer layers on GaAs substrates".OPTICAL AND QUANTUM ELECTRONICS 52.3(2020):138. |
入库方式： OAI收割
来源：半导体研究所
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