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Effect of stacking order on the electronic state of 1T-TaS2

文献类型：期刊论文

作者Wu, Zongxiu6; Bu, Kunliang6; Zhang, Wenhao6; Fei, Ying6; Zheng, Yuan6; Gao, Jingjing4,5; Luo, Xuan5; Liu, Zheng3; Sun, Yu-Ping1,2,5; Yin, Yi1,6
刊名PHYSICAL REVIEW B
出版日期2022-01-06
卷号105
ISSN号2469-9950
DOI10.1103/PhysRevB.105.035109
通讯作者Yin, Yi(yiyin@zju.edu.cn)
英文摘要New theoretical proposals and experimental findings on transition metal dichalcogenide 1T-TaS2 have revived interest in its possible Mott insulating state. We perform a comprehensive scanning tunneling microscopy and spectroscopy experiment on different single-step areas in pristine 1T-TaS2. After accurately determining the relative displacement of the Star of David superlattices in two layers, we find that different stacking orders can correspond to a similar large-gap spectrum on the upper terrace. When the measurement is performed away from the step edge, the large-gap spectrum can always be maintained. The stacking order seems to rarely disturb the large-gap spectrum in the ideal bulk material. We conclude that the large insulating gap is from the single-layer property, which is a correlation-induced Mott gap based on the single-band Hubbard model. Specific stacking orders can perturb the state and induce a small-gap or metallic spectrum for a limited area around the step edge, which we attribute to a surface and edge phenomenon. Our work provides more evidence about the stacking-order effect on the electronic state and deepens our understanding of the Mott insulating state in 1T-TaS2.
WOS关键词PHASE-TRANSITIONS ; INSULATOR ; LOCALIZATION ; PURE
资助项目National Key Research and Development Program of China[2016YFA0300404] ; National Key Research and Development Program of China[2019YFA0308602] ; Key Research and Development Program of Zhejiang Province, China[2021C01002] ; Fundamental Research Funds for the Central Universities in China ; National Natural Science Foundation of China[NSFC-11674326] ; National Natural Science Foundation of China[NSFC-11874357] ; National Natural Science Foundation of China[NSFC-11774196] ; Tsinghua University Initiative Scientific Research Program ; Joint Funds of the National Natural Science Foundation of China ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1832141] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U1932217] ; Chinese Academy of Sciences' Large-Scale Scientific Facility[U2032215]
WOS研究方向Materials Science ; Physics
语种英语
WOS记录号WOS:000742485400002
出版者AMER PHYSICAL SOC
资助机构National Key Research and Development Program of China ; Key Research and Development Program of Zhejiang Province, China ; Fundamental Research Funds for the Central Universities in China ; National Natural Science Foundation of China ; Tsinghua University Initiative Scientific Research Program ; Joint Funds of the National Natural Science Foundation of China ; Chinese Academy of Sciences' Large-Scale Scientific Facility
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/127113]  
专题中国科学院合肥物质科学研究院
通讯作者Yin, Yi
作者单位1.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
2.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
3.Tsinghua Univ, Inst Adv Study, Beijing 100084, Peoples R China
4.Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China
5.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
6.Zhejiang Univ, Dept Phys, Zhejiang Prov Key Lab Quantum Technol & Devices, Hangzhou 310027, Peoples R China
推荐引用方式
GB/T 7714		 Wu, Zongxiu,Bu, Kunliang,Zhang, Wenhao,et al. Effect of stacking order on the electronic state of 1T-TaS2[J]. PHYSICAL REVIEW B,2022,105.
APA Wu, Zongxiu.,Bu, Kunliang.,Zhang, Wenhao.,Fei, Ying.,Zheng, Yuan.,...&Yin, Yi.(2022).Effect of stacking order on the electronic state of 1T-TaS2.PHYSICAL REVIEW B,105.
MLA Wu, Zongxiu,et al."Effect of stacking order on the electronic state of 1T-TaS2".PHYSICAL REVIEW B 105(2022).

入库方式： OAI收割

来源：合肥物质科学研究院

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