p-Type Near-Infrared Transparent Delafossite Thin Films with Ultrahigh Conductivity
文献类型:期刊论文
作者 | Li, Chenhui6,7; Gong, Penglai5; Zheng, Jinxing4![]() ![]() ![]() ![]() ![]() ![]() |
刊名 | ADVANCED OPTICAL MATERIALS
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出版日期 | 2022-01-02 |
关键词 | delafossite near-infrared transmittance p-type conductivity transparent conducting oxides |
ISSN号 | 2195-1071 |
DOI | 10.1002/adom.202102559 |
通讯作者 | Zheng, Jinxing(jxzheng@ipp.ac.cn) ; Wei, Renhuai(rhwei@issp.ac.cn) ; Zhu, Xuebin(xbzhu@issp.ac.cn) |
英文摘要 | Design and implementation of efficient p-type transparent conducting (TC) oxides with excellent performance are the global material challenge. The strategy of "chemical modulation of the valence band" triggers the enthusiasm for p-type TC delafossite CuMO2. However, the low conductivity of previous CuMO2 films obstructs the development of delafossite-based electronics. Herein, a new p-type 4d transition metal Rh-based CuRhO2 film with large-size is first designed and fabricated by a facile solution method. Room-temperature conductivity as high as 735 S cm(-1) is achieved by substituting 10%Mg in Rh sites. Additionally, the acceptor-doped CuRhO2 films exhibit high near-infrared transmittance of 85-60% with low room-temperature sheet resistance of 4.28-0.18 k omega sq(-1). Furthermore, the electronic structure, electrical transport mechanism, and intra-band excitation feature for the CuRhO2 film are unveiled. The theoretical and experimental results make a great advance in p-type TC films and will pave a promising blueprint for future multifunctional opto-electronic devices. |
WOS关键词 | TERNARY OXIDES ; DESIGN ; CURHO2 ; AG ; CU |
资助项目 | National Natural Science Foundation of China[11604337] ; National Natural Science Foundation of China[11904154] ; National Natural Science Foundation of China[11804126] ; Key Lab of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences[PECL2019KF011] |
WOS研究方向 | Materials Science ; Optics |
语种 | 英语 |
WOS记录号 | WOS:000737076100001 |
出版者 | WILEY-V C H VERLAG GMBH |
资助机构 | National Natural Science Foundation of China ; Key Lab of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/127137] ![]() |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Zheng, Jinxing; Wei, Renhuai; Zhu, Xuebin |
作者单位 | 1.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, HFIPS, High Magnet Field Lab, Hefei 230031, Peoples R China 3.Jiangsu Univ Sci & Technol, Sch Sci, Zhenjiang 212003, Jiangsu, Peoples R China 4.Chinese Acad Sci, HFIPS, Inst Plasma Phys, Hefei 230031, Peoples R China 5.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 6.Univ Sci & Technol China, Hefei 230026, Peoples R China 7.Chinese Acad Sci, HFIPS, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China |
推荐引用方式 GB/T 7714 | Li, Chenhui,Gong, Penglai,Zheng, Jinxing,et al. p-Type Near-Infrared Transparent Delafossite Thin Films with Ultrahigh Conductivity[J]. ADVANCED OPTICAL MATERIALS,2022. |
APA | Li, Chenhui.,Gong, Penglai.,Zheng, Jinxing.,Zhao, Minglin.,Wei, Renhuai.,...&Sun, Yuping.(2022).p-Type Near-Infrared Transparent Delafossite Thin Films with Ultrahigh Conductivity.ADVANCED OPTICAL MATERIALS. |
MLA | Li, Chenhui,et al."p-Type Near-Infrared Transparent Delafossite Thin Films with Ultrahigh Conductivity".ADVANCED OPTICAL MATERIALS (2022). |
入库方式: OAI收割
来源:合肥物质科学研究院
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