Electronic structure, optical dispersion and luminescence properties of terbium gallium garnet crystal
文献类型:期刊论文
作者 | Zhang, Haotian1,2,3,4; Gao, Yuxi1,2,3,4; Huang, Changbao1,2,4; Chen, Yingying1,2,3,4; Dou, Renqin1,2,4; Zhang, Qingli1,2,4 |
刊名 | CRYSTENGCOMM |
出版日期 | 2021-12-10 |
DOI | 10.1039/d1ce01030a |
通讯作者 | Dou, Renqin(drq0564@aiofm.ac.cn) ; Zhang, Qingli(zql@aiofm.ac.cn) |
英文摘要 | Terbium gallium garnet (Tb3Ga5O12, TGG) is widely investigated due to its multifunctional applications. However, the electronic structure, optical dispersion properties, bandgap and luminescence mechanisms of the TGG crystal are still not reported. In this study, density functional theory (DFT) calculations were performed to investigate the electronic structure of TGG. The TGG single crystal was grown by the Czochralski method, and its dispersive refractive index, transmission spectrum and photoluminescence spectrum were measured. The first-principles calculation indicates that some of the 4f(n) configuration component of Tb3+ was mixed into the conduction band, and some component of the 5d state was mixed into 4f state in the gap of TGG, which partially removed the parity forbidden rule, and resulted in the D-5(4) -> F-4(J) optical transition. The Wemple DiDomenico (WDD) model was employed to fit the measured refractive indices, which gave its dispersion energy and optical bandgap. The bandgap of TGG was determined as equal to 3.83 eV, 3.76 eV and 3.85 eV by the DFT model, WDD model and Tauc's plot, respectively. |
WOS关键词 | FILM-FED GROWTH ; MAGNETOOPTICAL PROPERTIES ; THIN-FILMS ; 1ST-PRINCIPLES ; NANOPARTICLES ; INTENSITIES ; CERAMICS ; BEHAVIOR ; SPECTRA ; POWER |
资助项目 | National Natural Science Foundation of China[51802307] |
WOS研究方向 | Chemistry ; Crystallography |
语种 | 英语 |
出版者 | ROYAL SOC CHEMISTRY |
WOS记录号 | WOS:000739584100001 |
资助机构 | National Natural Science Foundation of China |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/127235] |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Dou, Renqin; Zhang, Qingli |
作者单位 | 1.Anhui Prov Key Lab Photon Devices & Mat, Hefei 230031, Peoples R China 2.Adv Laser Technol Lab Anhui Prov, Hefei 230037, Peoples R China 3.Univ Sci & Technol China, Hefei 230026, Peoples R China 4.Chinese Acad Sci, Crystal Lab Laser Technol Res Ctr, Anhui Inst Opt & Fine Mech, Hefei Inst Phys Sci, Hefei 230031, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, Haotian,Gao, Yuxi,Huang, Changbao,et al. Electronic structure, optical dispersion and luminescence properties of terbium gallium garnet crystal[J]. CRYSTENGCOMM,2021. |
APA | Zhang, Haotian,Gao, Yuxi,Huang, Changbao,Chen, Yingying,Dou, Renqin,&Zhang, Qingli.(2021).Electronic structure, optical dispersion and luminescence properties of terbium gallium garnet crystal.CRYSTENGCOMM. |
MLA | Zhang, Haotian,et al."Electronic structure, optical dispersion and luminescence properties of terbium gallium garnet crystal".CRYSTENGCOMM (2021). |
入库方式: OAI收割
来源:合肥物质科学研究院
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