Materials and possible mechanisms of extremely large magnetoresistance: a review
文献类型:期刊论文
作者 | Niu, Rui1,2; Zhu, W. K.1 |
刊名 | JOURNAL OF PHYSICS-CONDENSED MATTER
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出版日期 | 2022-03-16 |
卷号 | 34 |
关键词 | magnetoresistance compensation mobility topological matters 2D materials |
ISSN号 | 0953-8984 |
DOI | 10.1088/1361-648X/ac3b24 |
通讯作者 | Zhu, W. K.(wkzhu@hmfl.ac.cn) |
英文摘要 | Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low external field, has always been a useful functional feature in industrial technology and a core goal pursued by physicists and materials scientists. Conventional large MR materials are mainly manganites, whose colossal MR (CMR) can be as high as -90%. The dominant mechanism is attributed to spin configuration aligned by the external field, which reduces magnetic scattering and thus resistance. In recent years, some new systems have shown an extremely large unsaturated MR (XMR). Unlike ordinary metals, the positive MR of these systems can reach 10(3)%-10(8)% and is persistent under super high magnetic fields. The XMR materials are mainly metals or semimetals, distributed in high-mobility topological or non-topological systems, and some are magnetic, which suggests a wide range of application scenarios. Various mechanisms have been proposed for the potential physical origin of XMR, including electron-hole compensation, steep band, ultrahigh mobility, high residual resistance ratio, topological fermions, etc. It turns out that some mechanisms play a leading role in certain systems, while more are far from clearly defined. In addition, the researches on XMR are largely overlapped or closely correlated with other recently rising physics and materials researches, such as topological matters and two-dimensional (2D) materials, which makes elucidating the mechanism of XMR even more important. Moreover, the disclosed novel properties will lay a broad and solid foundation for the design and development of functional devices. In this review, we will discuss several aspects in the following order: (I) introduction, (II) XMR materials and classification, (III) proposed mechanisms for XMR, (IV) correlation with other systems (featured), and (V) conclusions and outlook. |
WOS关键词 | NONSATURATING MAGNETORESISTANCE ; GIANT MAGNETORESISTANCE ; ULTRAHIGH MOBILITY ; WEYL ; FIELD ; RESISTANCE ; INSULATOR ; FERMIONS ; BEHAVIOR ; BISMUTH |
资助项目 | National Natural Science Foundation of China[11874363] ; National Natural Science Foundation of China[U1932216] |
WOS研究方向 | Physics |
语种 | 英语 |
WOS记录号 | WOS:000740043200001 |
出版者 | IOP Publishing Ltd |
资助机构 | National Natural Science Foundation of China |
源URL | [http://ir.hfcas.ac.cn:8080/handle/334002/127263] ![]() |
专题 | 中国科学院合肥物质科学研究院 |
通讯作者 | Zhu, W. K. |
作者单位 | 1.Chinese Acad Sci, High Field Magnet Lab, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China |
推荐引用方式 GB/T 7714 | Niu, Rui,Zhu, W. K.. Materials and possible mechanisms of extremely large magnetoresistance: a review[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2022,34. |
APA | Niu, Rui,&Zhu, W. K..(2022).Materials and possible mechanisms of extremely large magnetoresistance: a review.JOURNAL OF PHYSICS-CONDENSED MATTER,34. |
MLA | Niu, Rui,et al."Materials and possible mechanisms of extremely large magnetoresistance: a review".JOURNAL OF PHYSICS-CONDENSED MATTER 34(2022). |
入库方式: OAI收割
来源:合肥物质科学研究院
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