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Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects

文献类型：期刊论文

作者Wang, Ying-Zhe1; Zheng, Xue-Feng1; Lv, Ling1; Cao, Yan-Rong2; Wang, Xiao-Hu1; Mao, Wei1; Du, Ming1; Hu, Pei-Pei3; Li, Pei-Xian4; Liu, Jie3
刊名SEMICONDUCTOR SCIENCE AND TECHNOLOGY
出版日期2021-09-01
卷号36期号:9页码:7
ISSN号0268-1242
关键词UVA LED swift heavy ion irradiation degradation defect low frequency noise
DOI10.1088/1361-6641/ac1b13
通讯作者Zheng, Xue-Feng(xfzheng@mail.xidian.edu.cn) ; Lv, Ling(llv@xidian.edu.cn)
英文摘要This work investigates the intrinsic degradation mechanism of InGaN/GaN UVA (320-400 nm) light emitting diodes (LEDs) after swift heavy ion irradiation from the defect aspect using temperature-dependent low frequency noise measurement. The UVA LEDs were exposed to 1423 MeV Ta ions with a fluence of 10(8)-10(10) ions cm(-2). The optical power decreases and the leakage current increases evidently after irradiation. The defect behaviors were characterized to analyze the degradation mechanism. It is indicated that the similar to 0.2 eV energy level defect decreases, and the defect with an energy level of about 0.65 eV increases with the increasing fluence, resulting in device degradation. Combining the defect energy level and the decreased yellow luminescence in the photoluminescence spectrum, the possible defect transform process is the newly created N interstitial atoms fill in the intrinsic V-Ga and form N-Ga after irradiation.
WOS关键词LOW-FREQUENCY NOISE ; YELLOW LUMINESCENCE ; ALGAN/GAN HEMTS ; 1/F NOISE ; RELIABILITY ; PERFORMANCE
资助项目National Natural Science Foundation of China[62104180] ; National Natural Science Foundation of China[61974115] ; National Natural Science Foundation of China[11690042] ; National Natural Science Foundation of China[61634005] ; National Natural Science Foundation of China[61974111] ; National Natural Science Foundation of China[12035019] ; National Natural Science Foundation of China[61904142] ; Natural Science Basic Research Plan in Shaanxi Province of China Program[2019ZDLGY16-03] ; Key Research and Development Program of Shaanxi[2020ZDLGY03-05] ; National Pre-research Foundation of China[31513020109]
WOS研究方向Engineering ; Materials Science ; Physics
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000688246900001
资助机构National Natural Science Foundation of China ; Natural Science Basic Research Plan in Shaanxi Province of China Program ; Key Research and Development Program of Shaanxi ; National Pre-research Foundation of China
源URL[http://119.78.100.186/handle/113462/136372]  
专题中国科学院近代物理研究所
通讯作者Zheng, Xue-Feng; Lv, Ling
作者单位1.Xidian Univ, Key Lab Wide Bandgap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China
2.Xidian Univ, Sch Mechanoelect Engn, Xian 710071, Peoples R China
3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
4.Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China
5.Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Peoples R China
推荐引用方式
GB/T 7714		 Wang, Ying-Zhe,Zheng, Xue-Feng,Lv, Ling,et al. Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,36(9):7.
APA Wang, Ying-Zhe.,Zheng, Xue-Feng.,Lv, Ling.,Cao, Yan-Rong.,Wang, Xiao-Hu.,...&Hao, Yue.(2021).Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,36(9),7.
MLA Wang, Ying-Zhe,et al."Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36.9(2021):7.

入库方式： OAI收割

来源：近代物理研究所

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