Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices
文献类型:期刊论文
| 作者 | Su, Chaohui1; Shan, Linbo1; Yang, Dongliang1; Zhao, Yanfei1; Fu, Yujun1; Liu, Jiande1,2 ; Zhang, Guangan3; Wang, Qi1; He, Deyan1
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| 刊名 | MICROELECTRONIC ENGINEERING
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| 出版日期 | 2021-07-15 |
| 卷号 | 247页码:4 |
| 关键词 | ALH-Al2O3 film CBRAM Heavy ion irradiation Resistive switching |
| ISSN号 | 0167-9317 |
| DOI | 10.1016/j.mee.2021.111600 |
| 通讯作者 | Wang, Qi(wangqi77@lzu.edu.cn) |
| 英文摘要 | In this work, the effects of heavy ion irradiation on atomic switches with Cu/Al2O3/Pt structure are investigated. The initial device is prone to hard breakdown after forming, while the device after irradiation exhibits good performance such as stable operating voltage, non-volatile switching (a retention characteristic of 10(5) s at room temperature) and good endurance (2000 switching cycles). Compared with the device after low-dose irradiation, the device under higher-dose irradiation shows more uniform off-state resistances but no relevant changes were observed on distributions of on-state resistances, set and reset voltages. |
| 资助项目 | National Natural Science Foundation of China[61874051] ; National Natural Science Foundation of China[U1732136] ; Key Program of Natural Science Foundation of Gansu Province[20JR5RA296] |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Optics ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000683574400007 |
| 出版者 | ELSEVIER |
| 资助机构 | National Natural Science Foundation of China ; Key Program of Natural Science Foundation of Gansu Province |
| 源URL | [http://119.78.100.186/handle/113462/136644] ![]() |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Wang, Qi |
| 作者单位 | 1.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Chinese Acad Sci, Lanzhou Inst Chem Phys, Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Su, Chaohui,Shan, Linbo,Yang, Dongliang,et al. Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices[J]. MICROELECTRONIC ENGINEERING,2021,247:4. |
| APA | Su, Chaohui.,Shan, Linbo.,Yang, Dongliang.,Zhao, Yanfei.,Fu, Yujun.,...&He, Deyan.(2021).Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices.MICROELECTRONIC ENGINEERING,247,4. |
| MLA | Su, Chaohui,et al."Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices".MICROELECTRONIC ENGINEERING 247(2021):4. |
入库方式: OAI收割
来源:近代物理研究所
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