Impact of heavy ion energy and species on single-event upset in commercial floating gate cells
文献类型：期刊论文
| 作者 | Ye, Bing4 ; Mo, Li-Hua1,4; Zhai, Peng-Fei4; Cai, Li4; Liu, Tao2; Yin, Ya-Nan3; Sun, You-Mei4; Liu, Jie4
|
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2021-05-01 |
| 卷号 | 120页码:6 |
| 关键词 | Flash memories Linear energy transfer Single-event upset Heavy ions Geant4 |
| ISSN号 | 0026-2714 |
| DOI | 10.1016/j.microrel.2021.114128 |
| 通讯作者 | Ye, Bing(yebing@impcas.ac.cn) ; Liu, Jie(j.liu@impcas.ac.cn) |
| 英文摘要 | The impact of heavy ion energy and species on single-event upsets (SEU) sensitivity in state-of-the-art NAND Flash memories is investigated in this paper. Experimental results indicate that the heavy ion with the same linear-energy-transfer (LET) but higher energy and mass will cause a decrease in the SEU cross-section of the three kinds of floating gate cells when the device surface LET value is 37.6 and 50.3 MeV.cm2/mg. The Geant4 simulation analysis show that the influence of the sensitive layer depth on LET and the difference in ion track structure are the main mechanisms for this experimental result. Some typical satellite orbits are also selected to study the influence of heavy ion energy and species on predicting the on-orbit error rate using SPACE RADIATION software. |
| 资助项目 | National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[12035019] ; National Natural Science Foundation of China[11675233] ; Science and Technology on Analog Integrated Circuit Laboratory[JCKY2019210C054] |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000652343900005 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Natural Science Foundation of China ; Science and Technology on Analog Integrated Circuit Laboratory |
| 源URL | [http://119.78.100.186/handle/113462/137151]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Ye, Bing; Liu, Jie |
| 作者单位 | 1.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China 2.Sci & Technol Analog Integrated Circuit Lab, Chongqing 400060, Peoples R China 3.China Elect Technol Grp Corp, Res Inst 58, Wuxi 214000, Jiangsu, Peoples R China 4.Chinese Acad Sci, Inst Modern Phys, 509 Nanchang Rd, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ye, Bing,Mo, Li-Hua,Zhai, Peng-Fei,et al. Impact of heavy ion energy and species on single-event upset in commercial floating gate cells[J]. MICROELECTRONICS RELIABILITY,2021,120:6. |
| APA | Ye, Bing.,Mo, Li-Hua.,Zhai, Peng-Fei.,Cai, Li.,Liu, Tao.,...&Liu, Jie.(2021).Impact of heavy ion energy and species on single-event upset in commercial floating gate cells.MICROELECTRONICS RELIABILITY,120,6. |
| MLA | Ye, Bing,et al."Impact of heavy ion energy and species on single-event upset in commercial floating gate cells".MICROELECTRONICS RELIABILITY 120(2021):6. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。