Method for obtaining junction temperature of power semiconductor devices combining computational fluid dynamics and thermal network
文献类型：期刊论文
| 作者 | Peng, Lisha1,2; Shen, Wanzeng1 ; Feng, Anhui1; Liu, Yan1,2; Gao, Daqing1; Yan, Hongbin1; Wu, Fengjun1
|
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
 |
| 出版日期 | 2020-10-01 |
| 卷号 | 976页码:10 |
| 关键词 | IGBT module Junction temperature Thermal network CFD simulation Cold plate |
| ISSN号 | 0168-9002 |
| DOI | 10.1016/j.nima.2020.164260 |
| 通讯作者 | Gao, Daqing(gaodq@impcas.ac.cn) |
| 英文摘要 | Keeping the highest junction temperature of Insulated Gate Bipolar Transistor (IGBT) modules below the critical temperature is the key to ensuring the stability and reliability of power supplies in accelerator facilities. However, the existing junction temperature extraction methods are not suitable for liquid cooling IGBTs and can be improved in terms of speed and accuracy. In order to investigate the junction temperature of IGBT modules and the characteristics of their water-cooled plates, an electro-thermal model combining the thermal network method and the computational fluid dynamics analysis is proposed. Because the power loss is corrected by the double-pulse test, and the thermal resistance of the cold plate is improved by computational fluid dynamics simulation, the accuracy of the model is improved. The thermal network method guarantees that the model is fast and can be easily applied to various operating conditions. The method is used to analyze the performance of two cold plates, select the cooling conditions, and further increase the switching frequency on the premise of ensuring the reliability of the IGBT module. The accuracy of the method has verified by experimental results, and the applicable conditions and the estimated junction temperature error are also analyzed. |
| WOS关键词 | VALIDATION ; MODULES ; MODEL |
| 资助项目 | National Natural Science Foundation of China[11805248] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000652199800013 |
| 出版者 | ELSEVIER |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/137169]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Gao, Daqing |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Peng, Lisha,Shen, Wanzeng,Feng, Anhui,et al. Method for obtaining junction temperature of power semiconductor devices combining computational fluid dynamics and thermal network[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2020,976:10. |
| APA | Peng, Lisha.,Shen, Wanzeng.,Feng, Anhui.,Liu, Yan.,Gao, Daqing.,...&Wu, Fengjun.(2020).Method for obtaining junction temperature of power semiconductor devices combining computational fluid dynamics and thermal network.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,976,10. |
| MLA | Peng, Lisha,et al."Method for obtaining junction temperature of power semiconductor devices combining computational fluid dynamics and thermal network".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 976(2020):10. |
入库方式： OAI收割
来源：近代物理研究所
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