中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 近代物理研究所
  3. 中国科学院近代物理研究所
Engineering and Microscopic Mechanism of Quantum Emitters Induced by Heavy Ions in hBN

文献类型：期刊论文

作者Gu, Rui4,5; Wang, Lei4; Zhu, Huiping4; Han, Shuangping3,6; Bai, Yurong7; Zhang, Xuewen4; Li, Bo4; Qin, Chengbing3,6; Liu, Jie1; Guo, Gang2
刊名ACS PHOTONICS
出版日期2021-10-20
卷号8期号:10页码:2912-2922
ISSN号2330-4022
关键词heavy ion irradiation hBN quantum emitters PL mapping production efficiency point defects
DOI10.1021/acsphotonics.1c00364
通讯作者Li, Bo(libo3@ime.ac.cn) ; Qin, Chengbing(chbqin@sxu.edu.cn) ; Han, Zhengsheng(zshan@ime.ac.cn)
英文摘要Solid-state quantum emitters play a critical role in the application of quantum information technology. Quantum emitters with high brightness at room temperature can be realized in hBN, and it has become a current research hotspot. However, much of the research up to now only produced quantum emitters at the edges and wrinkles of hBN, which tremendously limited the usage of the quantum emitters. In this work, heavy ions irradiation methods were employed to produce high-quality quantum emitters in the middle region of the hBN sample. The quantum emitter production engineering via heavy ions irradiation was systematically investigated. The dependence of irradiated ion type, energy, and fluence, as well as the thickness of the hBN flakes, on the production efficiency of the hBN quantum emitters were analyzed in detail. The characteristics of luminescence of quantum emitters, such as second-order correlation function g((2))(tau), stability, polarization, and saturation, were all compared with different irradiation conditions. In addition, based on the wavelength statistical results of quantum emitters in hBN, the transition energies of various intrinsic point defects in hBN were studied through first-principles calculations to reveal the originations of luminescence. The calculation results indicated that the V-N, V-B, and B-i point defects were possible candidates of the quantum emitter centers. Overall, in this study, according to experimental characterizations, heavy ion irradiation should be an efficient method to produce stable, ultrabright, highly linearly polarized quantum emitters in hBN flakes.
WOS关键词HEXAGONAL BORON-NITRIDE ; SINGLE-PHOTON GENERATION ; GRAPHITE ; GRAPHENE ; PHOTOLUMINESCENCE ; EMISSION ; ENERGY ; LIGHT
资助项目National Natural Science Foundation of China[61874135] ; National Key Research and Development Program of China[2016YFB0901804] ; Innovation Center of Radiation Application, China Institute of Atomic Energy[KFZC2018040203] ; Key Research Program of Frontier Sciences, Chinese Academy of Sciences[ZDBSLY-JSC015]
WOS研究方向Science & Technology - Other Topics ; Materials Science ; Optics ; Physics
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000710954200013
资助机构National Natural Science Foundation of China ; National Key Research and Development Program of China ; Innovation Center of Radiation Application, China Institute of Atomic Energy ; Key Research Program of Frontier Sciences, Chinese Academy of Sciences
源URL[http://119.78.100.186/handle/113462/138322]  
专题中国科学院近代物理研究所
通讯作者Li, Bo; Qin, Chengbing; Han, Zhengsheng
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
2.China Inst Atom Energy, Beijing 102413, Peoples R China
3.Shanxi Univ, State Key Lab Quantum Opt & Quantum Opt Devices, Inst Laser Spect, Taiyuan 030006, Shanxi, Peoples R China
4.Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing 100029, Peoples R China
5.Univ Chinese Acad Sci, Beijing 100029, Peoples R China
6.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
7.Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Shaanxi, Peoples R China
推荐引用方式
GB/T 7714		 Gu, Rui,Wang, Lei,Zhu, Huiping,et al. Engineering and Microscopic Mechanism of Quantum Emitters Induced by Heavy Ions in hBN[J]. ACS PHOTONICS,2021,8(10):2912-2922.
APA Gu, Rui.,Wang, Lei.,Zhu, Huiping.,Han, Shuangping.,Bai, Yurong.,...&Zhao, Fazhan.(2021).Engineering and Microscopic Mechanism of Quantum Emitters Induced by Heavy Ions in hBN.ACS PHOTONICS,8(10),2912-2922.
MLA Gu, Rui,et al."Engineering and Microscopic Mechanism of Quantum Emitters Induced by Heavy Ions in hBN".ACS PHOTONICS 8.10(2021):2912-2922.

入库方式： OAI收割

来源：近代物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。