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An investigation of FinFET single-event latch-up characteristic and mitigation method

文献类型：期刊论文

作者Li, Dongqing1,2,3; Liu, Tianqi1; Wu, Zhenyu4; Cai, Chang1,2; Zhao, Peixiong1,2; He, Ze1,2; Liu, Jie1
刊名MICROELECTRONICS RELIABILITY
出版日期2020-11-01
卷号114页码:8
关键词TCAD FinFET SCR SEL
ISSN号0026-2714
DOI10.1016/j.microrel.2020.113901
通讯作者Li, Dongqing(lidongqing@impcas.ac.cn) ; Liu, Tianqi(liutianqi@mail.tsinghua.edu.cn)
英文摘要FinFET technology compared with planar have an increased sensitivity to single-event latch-up. TCAD simulation demonstrates that the reduction in width of MOSFET, thickness of shallow trench isolation (STI) and nMOS-to-pMOS lateral spacing will reduce the holding voltage, critical charge and increase the current gain of parasitic CMOS Silicon Controlled Rectifier (SCR). Through circuit analysis, it found that the change of parasitic vertical and horizontal resistance is mainly responsible for aforementioned phenomena. In addition, we found that the common protective measures such as guard rings spacing and epitaxial substrate become increasingly difficult. Based on the current preventive methods, we think that appropriate increasing the doping depth or the width of guard rings will improve protection from SingleEvent Latch-up (SEL). Moreover, we verify the effectiveness of our methods by TCAD simulation and discuss the feasibility.
资助项目National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11805244]
WOS研究方向Engineering ; Science & Technology - Other Topics ; Physics
语种英语
WOS记录号WOS:000593888100009
出版者PERGAMON-ELSEVIER SCIENCE LTD
资助机构National Natural Science Foundation of China
源URL[http://119.78.100.186/handle/113462/138426]  
专题中国科学院近代物理研究所
通讯作者Li, Dongqing; Liu, Tianqi
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
4.Natl Univ Def Technol, Changsha 410000, Peoples R China
推荐引用方式
GB/T 7714		 Li, Dongqing,Liu, Tianqi,Wu, Zhenyu,et al. An investigation of FinFET single-event latch-up characteristic and mitigation method[J]. MICROELECTRONICS RELIABILITY,2020,114:8.
APA Li, Dongqing.,Liu, Tianqi.,Wu, Zhenyu.,Cai, Chang.,Zhao, Peixiong.,...&Liu, Jie.(2020).An investigation of FinFET single-event latch-up characteristic and mitigation method.MICROELECTRONICS RELIABILITY,114,8.
MLA Li, Dongqing,et al."An investigation of FinFET single-event latch-up characteristic and mitigation method".MICROELECTRONICS RELIABILITY 114(2020):8.

入库方式： OAI收割

来源：近代物理研究所

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