Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature
文献类型：期刊论文
| 作者 | Wang, Tao4; Yang, Zhen1; Li, Bingsheng5 ; Xu, Shuai5; Liao, Qing5; Ge, Fangfang2; Zhang, Tongmin3; Li, Jun3
|
| 刊名 | MATERIALS
 |
| 出版日期 | 2020-12-01 |
| 卷号 | 13期号:24页码:13 |
| 关键词 | 6H-SiC H-2(+) implantation exfoliation microstructure |
| DOI | 10.3390/ma13245723 |
| 通讯作者 | Wang, Tao(wangtaoxtc@gmail.com) ; Yang, Zhen(yangzh97@mail.sysu.edu.cn) ; Li, Bingsheng(b.s.li@swust.edu.cn) |
| 英文摘要 | Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as "ion-cut" or "Smart-Cut". It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in the 6H-SiC implanted by H-2(+) to a fluence of 5 x 10(16) H-2(+)/cm(2) at 450 and 900 degrees C was investigated by a combination of Raman spectroscopy and transmission electron microscopy. Different levels of damage caused by dynamic annealing were observed by Raman spectroscopy and transmission electron microscopy in the as-implanted sample. Atomic force microscopy and scanning white-light interferometry were used to observe the sample surface morphology. Surface blisters and exfoliations were observed in the sample implanted at 450 degrees C and then annealed at 1100 degrees C for 15 min, whereas surface blisters and exfoliation occurred in the sample implanted at 900 degrees C without further thermal treatment. This finding can be attributed to the increase in the internal pressure of platelets during high temperature implantation. The exfoliation efficiency, location, and roughness after exfoliation were investigated and possible reasons were discussed. This work provides a basis for further understanding and improving the high-efficiency "ion-cut" technology. |
| WOS关键词 | SILICON-CARBIDE ; ON-INSULATOR ; HYDROGEN IMPLANTATION ; SURFACE EXFOLIATION ; BUBBLE FORMATION ; ION-CUT ; IRRADIATION ; HELIUM ; WAFERS ; H+ |
| 资助项目 | National Natural Science Foundation of China[U1832133] ; National Natural Science Foundation of China[11905206] ; Sichuan Science and Technology Program[2020ZYD055] ; Doctor Research Foundation of Southwest University of Science and Technology[18zx714101] |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000603501700001 |
| 出版者 | MDPI |
| 资助机构 | National Natural Science Foundation of China ; Sichuan Science and Technology Program ; Doctor Research Foundation of Southwest University of Science and Technology |
| 源URL | [http://119.78.100.186/handle/113462/138510]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Wang, Tao; Yang, Zhen; Li, Bingsheng |
| 作者单位 | 1.Sun Yat Sen Univ, Sino French Inst Nucl Engn & Technol, Zhuhai 519082, Peoples R China 2.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 4.China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Sichuan, Peoples R China 5.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Tao,Yang, Zhen,Li, Bingsheng,et al. Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature[J]. MATERIALS,2020,13(24):13. |
| APA | Wang, Tao.,Yang, Zhen.,Li, Bingsheng.,Xu, Shuai.,Liao, Qing.,...&Li, Jun.(2020).Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature.MATERIALS,13(24),13. |
| MLA | Wang, Tao,et al."Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature".MATERIALS 13.24(2020):13. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。