Defect characterization of 6H-SiC studied by slow positron beam
文献类型：期刊论文
| 作者 | Wang Haiyun2; Weng Huimin1; Zhou Xianyi1 |
| 刊名 | CHINESE JOURNAL OF CHEMICAL PHYSICS
 |
| 出版日期 | 2008 |
| 卷号 | 21期号:4页码:333-338 |
| 关键词 | IRRADIATED SILICON-CARBIDE ELECTRON-SPIN-RESONANCE LIFETIME SPECTROSCOPY RADIATION DEFECTS ATOMIC DEFECTS ANNIHILATION PHOTOLUMINESCENCE MODES positron annihilation defect semiconductor |
| ISSN号 | 1674-0068 |
| 其他题名 | Defect Characterization of 6H-SiC Studied by Slow Positron Beam |
| 英文摘要 | The defect formation and annealing behavior in as-grown and electron-irradiated 6H-SiC wafers were investigated by variable-energy slow positron beam. For the n-type as-grown samples, it was found that annealing decreased the defect concentration due to recombination with interstitial, and when it was annealed at 1400 degrees C for 30 min in vacuum, a 20 nm thick Si layer was found on the top of SiC substrate, which is a direct proof of the Si atom diffusing to the surface when annealed at the high temperature stages. During the high temperature annealing stage, we found an obvious surface effect occurred that induced the higher S parameter close to the surface. This may be caused by the diffusion of the Si atoms to the surface during annealing. After 10 MeV electron irradiation of the n-type 6H-SiC, the positron effective diffusion length decreased from 86.2 nm to 39.1 nm. This shows that there are some defects created in n-type 6H-SiC. But in the p-type 6H-SiC irradiated by 10 MeV electrons, the change is very small. This may be because of the opposite charge of the vacancy defects. The same annealing behavior as that of as-grown 6H-SiC samples was also observed for the 1.8 MeV electron-irradiated 6H-SiC samples except that after being annealed at 300 degrees C, its defect concentration increased. This may be explained as the generation of carbon vacancies, due to either the recombination between divacancies and silicon interstitial, or the charge of the charge states. |
| 语种 | 英语 |
| CSCD记录号 | CSCD:3370687 |
| 源URL | [http://119.78.100.186/handle/113462/138809]  |
| 专题 | 中国科学院近代物理研究所 |
| 作者单位 | 1.中国科学院近代物理研究所 2.南京大学 |
| 推荐引用方式 GB/T 7714 | Wang Haiyun,Weng Huimin,Zhou Xianyi. Defect characterization of 6H-SiC studied by slow positron beam[J]. CHINESE JOURNAL OF CHEMICAL PHYSICS,2008,21(4):333-338. |
| APA | Wang Haiyun,Weng Huimin,&Zhou Xianyi.(2008).Defect characterization of 6H-SiC studied by slow positron beam.CHINESE JOURNAL OF CHEMICAL PHYSICS,21(4),333-338. |
| MLA | Wang Haiyun,et al."Defect characterization of 6H-SiC studied by slow positron beam".CHINESE JOURNAL OF CHEMICAL PHYSICS 21.4(2008):333-338. |
入库方式： OAI收割
来源：近代物理研究所
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