Graphene-GaN Schottky diodes
文献类型：期刊论文
| 作者 | Kim Seongjun2; Seo Tae Hoon1; Kim Myung Jong1; Song Keun Man3; Suh EunKyung2; Kim Hyunsoo2 |
| 刊名 | NANO RESEARCH
 |
| 出版日期 | 2015 |
| 卷号 | 8期号:4页码:1327-1338 |
| 关键词 | LIGHT-EMITTING-DIODES N-TYPE GAN THERMIONIC-FIELD-EMISSION SENSITIZED SOLAR-CELLS CONTACT RESISTANCE BARRIER HEIGHT ELECTRICAL CHARACTERISTICS TRANSPARENT ELECTRODES RAMAN-SPECTROSCOPY METAL CONTACTS graphene GaN Schottky diode Schottky barrier height Fermi level pinning |
| ISSN号 | 1998-0124 |
| 其他题名 | Graphene-GaN Schottky diodes |
| 英文摘要 | The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of similar to 10(7) at +/- 2 V and a low reverse leakage current of 1.0 x 10(-8) A/cm(2) at -5 V were observed. The Schottky barrier heights, as determined by the thermionic emission model, Richardson plots, and barrier inhomogeneity model, were 0.90, 0.72, and 1.24 +/- 0.13 eV, respectively. Despite the predicted low barrier height of similar to 0.4 eV at the graphene-GaN interface, the formation of excellent rectifying characteristics with much larger barrier heights is attributed to the presence of a large number of surface states (1.2 x 10(13) states/cm(2)/eV) and the internal spontaneous polarization field of GaN, resulted in a significant upward surface band bending or a bare surface barrier height as high as of 2.9 eV. Using the S parameter of 0.48 (measured from the work function dependence of Schottky barrier height) and the mean barrier height of 1.24 eV, the work function of graphene in the Au/graphene/GaN stack could be approximately estimated to be as low as 3.5 eV. The obtained results indicate that graphene is a promising candidate for use as a Schottky rectifier in GaN semiconductors with n-type conductivity. |
| 资助项目 | [Priority Research Center Program through the National Research Foundation of Korea - Ministry of Education, Science and Technology of the Korean government] ; [Ministry of Education] ; [National Research Foundation of Korea (NRF)] |
| 语种 | 英语 |
| CSCD记录号 | CSCD:5454097 |
| 源URL | [http://119.78.100.186/handle/113462/138907]  |
| 专题 | 中国科学院近代物理研究所 |
| 作者单位 | 1.中国科学院近代物理研究所 2.陕西省地震局 3.Korea Adv Nano Fab Ctr, Suwon 443700, South Korea |
| 推荐引用方式 GB/T 7714 | Kim Seongjun,Seo Tae Hoon,Kim Myung Jong,et al. Graphene-GaN Schottky diodes[J]. NANO RESEARCH,2015,8(4):1327-1338. |
| APA | Kim Seongjun,Seo Tae Hoon,Kim Myung Jong,Song Keun Man,Suh EunKyung,&Kim Hyunsoo.(2015).Graphene-GaN Schottky diodes.NANO RESEARCH,8(4),1327-1338. |
| MLA | Kim Seongjun,et al."Graphene-GaN Schottky diodes".NANO RESEARCH 8.4(2015):1327-1338. |
入库方式： OAI收割
来源：近代物理研究所
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