Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 degrees C*
文献类型：期刊论文
| 作者 | Liao, Qing2; Li, Bingsheng2 ; Kang, Long1; Li, Xiaogang1
|
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2020-10-01 |
| 卷号 | 29期号:7页码:7 |
| 关键词 | He implantation cavities extended defects transmission electron microscopy recrystallization |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/ab8abc |
| 通讯作者 | Liao, Qing(libingshengmvpmvp@163.com) |
| 英文摘要 | The formation of cavities in silicon carbide is vitally useful to "smart-cut" and metal gettering in semiconductor industry. In this study, cavities and extended defects formed in helium (He) ions implanted 6H-SiC at room temperature (RT) and 750 degrees C followed by annealing at 1500 degrees C are investigated by a combination of transmission electron microscopy and high-resolution electron microscopy. The observed cavities and extended defects are related to the implantation temperature. Heterogeneously distributed cavities and extended defects are observed in the helium-implanted 6H-SiC at RT, while homogeneously distributed cavities and extended defects are formed after He-implanted 6H-SiC at 750 degrees C. The possible reasons are discussed. |
| WOS关键词 | MICROSTRUCTURAL EVOLUTION ; RECRYSTALLIZATION |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000577557200001 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://119.78.100.186/handle/113462/139752]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liao, Qing |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liao, Qing,Li, Bingsheng,Kang, Long,et al. Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 degrees C*[J]. CHINESE PHYSICS B,2020,29(7):7. |
| APA | Liao, Qing,Li, Bingsheng,Kang, Long,&Li, Xiaogang.(2020).Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 degrees C*.CHINESE PHYSICS B,29(7),7. |
| MLA | Liao, Qing,et al."Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 degrees C*".CHINESE PHYSICS B 29.7(2020):7. |
入库方式： OAI收割
来源：近代物理研究所
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