Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs
文献类型：期刊论文
| 作者 | Zhao, Peixiong1,2 ; Liu, Tianqi1; Cai, Chang1,2; He, Ze1,2; Li, Dongqing1,2; Liu, Jie1
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| 刊名 | ELECTRONICS
 |
| 出版日期 | 2020-08-01 |
| 卷号 | 9期号:8页码:14 |
| 关键词 | Monte-Carlo simulation single-event upset test standard three-dimensional integrated circuits ultrahigh-energy heavy ion |
| DOI | 10.3390/electronics9081230 |
| 通讯作者 | Liu, Jie(j.liu@impcas.ac.cn) |
| 英文摘要 | The interaction of radiation with three-dimensional (3D) electronic devices can be determined through the detection of single-event effects (SEU). In this study, we propose a method for the evaluation of SEUs in 3D static random-access memories (SRAMs) induced by heavy-ion irradiation. The cross-sections (CSs) of different tiers, as a function of the linear energy transfer (LET) under high, medium, and low energy heavy-ion irradiation, were obtained through Monte Carlo simulations. The simulation results revealed that the maximum value of the CS was obtained under the medium-energy heavy-ion penetration, and the effect of penetration range of heavy ions was observed in different tiers of 3D-stacked devices. The underlying physical mechanisms of charge collection under different heavy-ion energies were discussed. Thereafter, we proposed an equation of the critical heavy-ion range that can be used to obtain the worst CS curve was proposed. Considering both the LET spectra and flux of galactic cosmic ray (GCR) and the variation in the heavy-ion Bragg peak values with the atomic number, we proposed a heavy-ion irradiation test guidance for 3D-stacked devices. In addition, the effectiveness of this method was verified through simulations of the three-tier vertically stacked SRAM and the ultrahigh-energy heavy-ion irradiation experiment of the two-tier vertically stacked SRAM. this study provides a theoretical framework for the detection of SEUs induced by heavy-ion irradiation in 3D-integrated devices. |
| WOS关键词 | CROSS-SECTION ; ENERGY ; RADIATION ; CIRCUITS ; IMPACT |
| 资助项目 | National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[11690041] |
| WOS研究方向 | Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000564666900001 |
| 出版者 | MDPI |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/139798]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Peixiong,Liu, Tianqi,Cai, Chang,et al. Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs[J]. ELECTRONICS,2020,9(8):14. |
| APA | Zhao, Peixiong,Liu, Tianqi,Cai, Chang,He, Ze,Li, Dongqing,&Liu, Jie.(2020).Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs.ELECTRONICS,9(8),14. |
| MLA | Zhao, Peixiong,et al."Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs".ELECTRONICS 9.8(2020):14. |
入库方式： OAI收割
来源：近代物理研究所
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