Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy
文献类型：期刊论文
| 作者 | Huang, Mingmin1,2; Yang, Zhimei1,2; Wang, Shaomin1; Liu, Jiyuan1; Gong, Min1,2; Ma, Yao1,2; Liu, Jie3 ; Zhai, Pengfei3; Sun, Youmei3; Li, Yun1,2
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 出版日期 | 2020-09-01 |
| 卷号 | 478页码:5-10 |
| ISSN号 | 0168-583X |
| 关键词 | Schottky barrier diodes Raman spectroscopy Recrystallization effect Swift heavy ion SiC |
| DOI | 10.1016/j.nimb.2020.05.002 |
| 通讯作者 | Li, Yun(yunli@scu.edu.cn) |
| 英文摘要 | It is especially important to study on the change of 4H-SiC physical properties by swift heavy ion irradiation (SHI) for the future application of SiC devices in extreme irradiation environment. Herein, 4H-SiC Schottky barrier diodes (SBDs) are irradiated by 1.9 GeV Bi-209 ion beams without intentional heating. The cross-sectional Micro-Raman Spectroscopy (MRS) results clearly indicated that there are new vibration bands at low fluence. This is attributed to the formation of homonuclear bonds Si-Si and C-C within the SiC network to break down the Raman selection rules. At high fluence, there are only typical Raman data for 4H-SiC crystal and the disappearance of Si-Si and C-C bonds. In addition, it is observed that the interfacial structure is modified due to the silicon and carbon atomic migration during SHI process at the metal-semiconductor interface, and then reacting at high temperature annealing treatment. Furthermore, these results suggest that the evolution of recrystallization effect is varied with irradiation fluence by the cross-sectional MRS. |
| WOS关键词 | ELECTRICAL DEGRADATION ; SCATTERING ; PHOTOLUMINESCENCE ; IRRADIATION ; DEPENDENCE ; NEUTRON ; SPECTRA ; SI |
| 资助项目 | National Natural Science Foundation of China[61704116] ; National Natural Science Foundation of China[61804101] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| 出版者 | ELSEVIER |
| WOS记录号 | WOS:000564689300002 |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/139801]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, Yun |
| 作者单位 | 1.Sichuan Univ, Coll Phys, Key Lab Microelect, Chengdu 610064, Peoples R China 2.Sichuan Univ, Key Lab Radiat Phys & Technol, Minist Educ, Chengdu 610064, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, Mingmin,Yang, Zhimei,Wang, Shaomin,et al. Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2020,478:5-10. |
| APA | Huang, Mingmin.,Yang, Zhimei.,Wang, Shaomin.,Liu, Jiyuan.,Gong, Min.,...&Li, Yun.(2020).Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,478,5-10. |
| MLA | Huang, Mingmin,et al."Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 478(2020):5-10. |
入库方式： OAI收割
来源：近代物理研究所
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