The effect of cavities on recrystallization growth of high-fluence He implanted-SiC
文献类型：期刊论文
| 作者 | Zhang, Tongmin4 ; He, Xiaoxun1; Chen, Limin1; Li, Jun4; Liao, Qing1; Xu, Shuai1; Zheng, Pengfei3; Li, Bingsheng1,2
|
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2021-12-15 |
| 卷号 | 509页码:68-72 |
| ISSN号 | 0168-583X |
| 关键词 | He implantation Recrystallization Microstructure 6H-SiC |
| DOI | 10.1016/j.nimb.2021.08.012 |
| 通讯作者 | Li, Jun(lijun@impcas.ac.cn) ; Li, Bingsheng(libingshengmvp@163.com) |
| 英文摘要 | The effect of cavities on recrystallization growth of amorphous SiC induced by a high fluence He implantation was investigated. 300 keV He ions were used to implant the 6H-SiC (0001) wafer to a fluence of 4.4 x 1017/cm2 at room temperature. A buried amorphous layer with a width of approximately 468 nm was formed. Moreover, many spherical bubbles with diameters over 25 nm were observed by transmission electron microscopy. Recrystallization of the buried amorphous layer was visible after 900 degrees C annealing for 30 min. Some irregular cavities were found in the damaged layer. The recrystallization started from the amorphous/crystalline interface, and the formed cavities retarded the epitaxial growth. Nanocrystalline SiC was formed in the cavity layer. Extended defects were also characterized by transmission electron microscopy. The research results will give an insight into the recrystallization process in amorphous SiC. |
| WOS关键词 | AMORPHOUS-SILICON CARBIDE ; HELIUM ; AMORPHIZATION ; NUCLEATION ; RELAXATION ; SIMULATION ; DEFECT |
| 资助项目 | National Natural Science Foundation of China[U1832133] ; National Natural Science Foundation of China[12075194] ; Sichuan Science and Technology Program[2020ZYD055] ; National Key Research and Development Program of China[2017YFE0301306] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| 出版者 | ELSEVIER |
| WOS记录号 | WOS:000718136300002 |
| 资助机构 | National Natural Science Foundation of China ; Sichuan Science and Technology Program ; National Key Research and Development Program of China |
| 源URL | [http://119.78.100.186/handle/113462/139991]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, Jun; Li, Bingsheng |
| 作者单位 | 1.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China 2.Southwest Univ Sci & Technol, Minist Educ, Engn Res Ctr Biomass Mat, Mianyang 621010, Sichuan, Peoples R China 3.Southwestern Inst Phys, Chengdu 610041, Peoples R China 4.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Tongmin,He, Xiaoxun,Chen, Limin,et al. The effect of cavities on recrystallization growth of high-fluence He implanted-SiC[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2021,509:68-72. |
| APA | Zhang, Tongmin.,He, Xiaoxun.,Chen, Limin.,Li, Jun.,Liao, Qing.,...&Li, Bingsheng.(2021).The effect of cavities on recrystallization growth of high-fluence He implanted-SiC.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,509,68-72. |
| MLA | Zhang, Tongmin,et al."The effect of cavities on recrystallization growth of high-fluence He implanted-SiC".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 509(2021):68-72. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。