Comparison of Cavities Formed in Single Crystalline and Polycrystalline alpha-SiC after H Implantation
文献类型：期刊论文
| 作者 | Liao, Qing2; Kang, Long3; Zhang, Tong-Min3 ; Liu, Hui-Ping3; Wang, Tao4; Li, Xiao-Gang3; Li, Jin-Yu3; Yang, Zhen1; Li, Bing-Sheng2
|
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2020-06-01 |
| 卷号 | 37期号:7页码:5 |
| 关键词 | 61 80 Jh 61 82 Fk 68 37 Lp 81 40 Wx |
| ISSN号 | 0256-307X |
| DOI | 10.1088/0256-307X/37/7/076102 |
| 通讯作者 | Li, Bing-Sheng(libingshengmvp@163.com) |
| 英文摘要 | Cavities and extended defects formed in single crystalline and polycrystalline alpha-SiC implanted with H(+)ions are compared. The samples are investigated by cross-sectional transmission electron microscopy. H(2)bubbles are formed during H implantation and H(2)molecules escape the sample to form cavities during thermal annealing at 1100 degrees C. Microcracks and the extended defects prefer to nucleate in single crystalline alpha-SiC, but not polycrystalline alpha-SiC. Grain boundaries can account for the experimental results. The formation of cavities on grain boundaries is investigated. |
| WOS关键词 | EXFOLIATION ; DAMAGE |
| 资助项目 | National Natural Science Foundation of China[U1832133] ; National Natural Science Foundation of China[11905206] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000553033200001 |
| 出版者 | IOP PUBLISHING LTD |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/140206]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, Bing-Sheng |
| 作者单位 | 1.Sun Yat Sen Univ, Sino French Inst Nucl Engn & Technol, Zhuhai 519082, Peoples R China 2.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 4.China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Sichuan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liao, Qing,Kang, Long,Zhang, Tong-Min,et al. Comparison of Cavities Formed in Single Crystalline and Polycrystalline alpha-SiC after H Implantation[J]. CHINESE PHYSICS LETTERS,2020,37(7):5. |
| APA | Liao, Qing.,Kang, Long.,Zhang, Tong-Min.,Liu, Hui-Ping.,Wang, Tao.,...&Li, Bing-Sheng.(2020).Comparison of Cavities Formed in Single Crystalline and Polycrystalline alpha-SiC after H Implantation.CHINESE PHYSICS LETTERS,37(7),5. |
| MLA | Liao, Qing,et al."Comparison of Cavities Formed in Single Crystalline and Polycrystalline alpha-SiC after H Implantation".CHINESE PHYSICS LETTERS 37.7(2020):5. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。