中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000 degrees C

文献类型:期刊论文

作者Li, Bingsheng1,2; Liu, Huiping2; Shen, Tielong2; Xu, Lijun2; Wang, Jie1; Zhao, Fuqiang3; Peng, Dingping3; Li, Junhan3; Sheng, Yanbin2; Xiong, Anli3
刊名JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
出版日期2020-04-01
卷号40期号:4页码:1014-1022
关键词3C-SiC He irradiation Microstructure Stacking faults High temperature
ISSN号0955-2219
DOI10.1016/j.jeurceramsoc.2019.11.026
通讯作者Li, Bingsheng(libingshengmvp@163.com)
英文摘要The effect of the high-temperature helium irradiation on microstructural evolution of 3C-SiC was investigated by the combination of Raman spectroscopy, conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). 3C-SiC wafers were irradiated with 130 keV He+ ions at fluences of 2 x 10(16) He+/cm(2), 4 x 10(16) He+/cm(2) and 2 x 10(17) He+/cm(2) at 1000 degrees C. Helium bubbles, dislocation loops, and their interaction with the stacking faults were focused on and characterized by TEM. Helium bubbles preferentially nucleate and grow on stacking faults. Bubble links on the (100) plane in 3C-SiC are formed. In addition, stacking faults can effectively trap irradiation-induced lattice defects to enhance their recovery. The type of irradiation -induced lattice defects and elemental distribution are also investigated. The research results are valuable for the 3C-SiC used in the advanced nuclear energy systems.
WOS关键词MECHANICAL-PROPERTIES ; SILICON-CARBIDE ; HEAVY-ION ; COMPOSITES ; RAMAN ; IMPLANTATION ; CHALLENGES ; EVOLUTION ; CLUSTERS ; CAVITIES
资助项目National Natural Science Foundation of China[U1832133] ; National Natural Science Foundation of China[11475229] ; Doctor Research Foundation of Southwest University of Science and Technology[18zx7141]
WOS研究方向Materials Science
语种英语
WOS记录号WOS:000514747500009
出版者ELSEVIER SCI LTD
资助机构National Natural Science Foundation of China ; Doctor Research Foundation of Southwest University of Science and Technology
源URL[http://119.78.100.186/handle/113462/141077]  
专题中国科学院近代物理研究所
通讯作者Li, Bingsheng
作者单位1.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
3.Southwest Univ Sci & Technol, Sch Natl Def Sci & Technol, Mianyang 621010, Sichuan, Peoples R China
推荐引用方式
GB/T 7714
Li, Bingsheng,Liu, Huiping,Shen, Tielong,et al. Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000 degrees C[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2020,40(4):1014-1022.
APA Li, Bingsheng.,Liu, Huiping.,Shen, Tielong.,Xu, Lijun.,Wang, Jie.,...&Xiong, Anli.(2020).Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000 degrees C.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,40(4),1014-1022.
MLA Li, Bingsheng,et al."Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000 degrees C".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 40.4(2020):1014-1022.

入库方式: OAI收割

来源:近代物理研究所

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