Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories
文献类型：期刊论文
| 作者 | Yin, Ya-nan1,2; Liu, Jie1 ; Liu, Tian-qi1; Ye, Bing1; Ji, Qing-gang1; Sun, You-mei1; Zhou, Xin-jie2
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| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2019-11-01 |
| 卷号 | 102页码:6 |
| 关键词 | Annealing Flash memories Heavy ions Retention errors Single event upset |
| ISSN号 | 0026-2714 |
| DOI | 10.1016/j.microrel.2019.113450 |
| 通讯作者 | Liu, Jie(j.liu@impcas.ac.cn) |
| 英文摘要 | Using the Kr-86, Xe-129 and Bi-209 ions provided by the Heavy Ion Research Facility in Lanzhou (HIRFL), the short-term and long-term radiation effects induced by heavy ions induced in 50 nm NAND floating gate (FG) flash memories are investigated. The linear energy transfer (LET) value covers the range from 20.7 to 99.8 MeV.cm(2)/mg. Only upset errors in FG cells are observed due to that the flash memories are powered off and the peripheral circuitries are shielded during heavy ion irradiation. The errors in FG cells irradiated with ions of different LET values are decreasing with time under room temperature condition. After the reprogramming of flash memories, retention errors in FG cells are observed in some flash memories, which are irradiated by heavy ions with LET values greater than 37.6 MeV.cm(2)/mg. The dependence of single event upset, annealing of errors and retention errors in FG cells on the ion LET value is analysed and the underlying mechanisms are discussed. |
| WOS关键词 | SINGLE EVENT UPSETS ; ERRORS ; RETENTION ; EXPOSURE ; CELLS ; SIO2 |
| 资助项目 | National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[U1532261] |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000499736200008 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/141208]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.China Elect Technol Grp Corp, 58 Res Inst, Wuxi 214000, Jiangsu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yin, Ya-nan,Liu, Jie,Liu, Tian-qi,et al. Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories[J]. MICROELECTRONICS RELIABILITY,2019,102:6. |
| APA | Yin, Ya-nan.,Liu, Jie.,Liu, Tian-qi.,Ye, Bing.,Ji, Qing-gang.,...&Zhou, Xin-jie.(2019).Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories.MICROELECTRONICS RELIABILITY,102,6. |
| MLA | Yin, Ya-nan,et al."Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories".MICROELECTRONICS RELIABILITY 102(2019):6. |
入库方式： OAI收割
来源：近代物理研究所
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