Lattice disorder and N elemental segregation in ion implanted GaN epilayer
文献类型：期刊论文
| 作者 | Li, B. S.1,2; Liu, H. P.2; Xu, L. J.2; Wang, J.3; Song, J.3; Peng, D. P.3; Li, J. H.3; Zhao, F. Q.3; Kang, L.2; Zhang, T. M.2 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2020 |
| 卷号 | 499页码:9 |
| 关键词 | He implantation Lattice disorder GaN Transmission electron microscopy Dislocation loops |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2019.143911 |
| 通讯作者 | Li, B. S.(libingshengmvp@163.com) |
| 英文摘要 | The lattice disorder and elemental distribution in He-implanted GaN epilayer at a fluence of 4 x 10(16) He+/cm(2) at 450 degrees C have been investigated by a combination of conventional, high resolution transmission electron microscopy and electron energy loss spectroscopy. High resolution transmission electron microscopy shows interstitial-type dislocation loops attached to He bubbles. The nature of dislocation loops and stacking faults are carefully investigated by high resolution transmission electron microscopy. Electron energy loss spectroscopy shows the deficit of N atoms and enriched Ga nanocrystals formed in the damage region, which is comparable with the previous reports. In addition, the chemical environment of nitrogen upon He+ implantation is first investigated in the present experimental results. The research results will be used for understanding ion irradiation-induced damage in GaN. |
| WOS关键词 | HE-IMPLANTATION ; INDUCED VOIDS ; HYDROGEN ; DEFECTS ; HELIUM ; IRRADIATION ; SILICON ; LAYER ; EVOLUTION ; FILMS |
| 资助项目 | National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[U1832133] ; Doctor Research Foundation of Southwest University of Science and Technology[18zx7141] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000502588700032 |
| 出版者 | ELSEVIER |
| 资助机构 | National Natural Science Foundation of China ; Doctor Research Foundation of Southwest University of Science and Technology |
| 源URL | [http://119.78.100.186/handle/113462/141283]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, B. S. |
| 作者单位 | 1.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Southwest Univ Sci & Technol, Sch Natl Def Sci & Technol, Mianyang 621010, Sichuan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, B. S.,Liu, H. P.,Xu, L. J.,et al. Lattice disorder and N elemental segregation in ion implanted GaN epilayer[J]. APPLIED SURFACE SCIENCE,2020,499:9. |
| APA | Li, B. S..,Liu, H. P..,Xu, L. J..,Wang, J..,Song, J..,...&Xiong, An L..(2020).Lattice disorder and N elemental segregation in ion implanted GaN epilayer.APPLIED SURFACE SCIENCE,499,9. |
| MLA | Li, B. S.,et al."Lattice disorder and N elemental segregation in ion implanted GaN epilayer".APPLIED SURFACE SCIENCE 499(2020):9. |
入库方式： OAI收割
来源：近代物理研究所
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