Effect of swift heavy 86Kr(30+) ions irradiation on optical and electrical properties of p-type transparent Ni-doped CuAlO2 films
文献类型：期刊论文
| 作者 | Ma, Lingxiao1; Yin, Dayu2 ; Dong, Chenhao1; Lan, Wei1; Xie, Erqing1
|
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 出版日期 | 2019-12-20 |
| 页码 | 9 |
| ISSN号 | 0957-4522 |
| DOI | 10.1007/s10854-019-02734-7 |
| 通讯作者 | Lan, Wei(lanw@lzu.edu.cn) |
| 英文摘要 | Swift heavy ion (SHI) irradiation is an effective approach to modulate the structure, optical and electrical properties of semiconductors. Herein, we present the influence of 86Kr(30+) ions irradiation on optical and electrical properties of p-type transparent oxide semiconductor Ni-doped CuAlO2 films prepared by sol-gel method. The results reveal that Ni-doping inhibits the amorphization of CuAlO2 films during swift heavy ions irradiation and decreases the surface roughness of SHI-irradiated Ni-doped CuAlO2 films. However, SHI-irradiated Ni-doped CuAlO2 films exhibit higher optical transmittance (74%) and lower electrical resistivity (11.5 omega cm), which corresponds to a decrease of two orders of magnitude due to the generation of a large number of carriers. In addition, SHI-irradiated Ni-doped CuAlO2 film renders photosensitive behavior and a reduced electrical resistivity of 7.4 omega cm is achieved under UV illumination. The superior optical and electrical properties of SHI-irradiated Ni-doped CuAlO2 films can be ascribed to the thermal spike effect of high-energy ions. |
| WOS关键词 | ELECTRONIC-PROPERTIES ; THIN-FILMS ; TIN OXIDE ; STABILITY |
| 资助项目 | National Natural Science Foundation of China[61874166] ; National Natural Science Foundation of China[U1832149] ; Natural Science Foundation of Gansu province[18JR3RA292] |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000503673900001 |
| 出版者 | SPRINGER |
| 资助机构 | National Natural Science Foundation of China ; Natural Science Foundation of Gansu province |
| 源URL | [http://119.78.100.186/handle/113462/141369]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Lan, Wei |
| 作者单位 | 1.Lanzhou Univ, Sch Phys Sci & Technol, Minist Educ, Key Lab Special Funct Mat & Struct Design, Lanzhou 730000, Gansu, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ma, Lingxiao,Yin, Dayu,Dong, Chenhao,et al. Effect of swift heavy 86Kr(30+) ions irradiation on optical and electrical properties of p-type transparent Ni-doped CuAlO2 films[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2019:9. |
| APA | Ma, Lingxiao,Yin, Dayu,Dong, Chenhao,Lan, Wei,&Xie, Erqing.(2019).Effect of swift heavy 86Kr(30+) ions irradiation on optical and electrical properties of p-type transparent Ni-doped CuAlO2 films.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,9. |
| MLA | Ma, Lingxiao,et al."Effect of swift heavy 86Kr(30+) ions irradiation on optical and electrical properties of p-type transparent Ni-doped CuAlO2 films".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2019):9. |
入库方式： OAI收割
来源：近代物理研究所
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