Heavy ion irradiation induced hard error in MTJ of the MRAM memory array
文献类型：期刊论文
| 作者 | Zhao, P. X.1,2; Liu, T. Q.1; Cai, C.1,2; Li, D. Q.1,2; Ji, Q. G.1,2; He, Z.1,2; Zhai, P. F.1; Sun, Y. M.1; Gu, S.3 ; Liu, J.1
|
| 刊名 | MICROELECTRONICS RELIABILITY
 |
| 出版日期 | 2019-09-01 |
| 卷号 | 100页码:7 |
| 关键词 | MTJ damage Heavy ion Displacement damage Hard bit error Annealing effect |
| ISSN号 | 0026-2714 |
| DOI | 10.1016/j.microrel.2019.06.039 |
| 通讯作者 | Liu, J.(j.liu@impcas.ac.cn) |
| 英文摘要 | The radiation effects of magnetic tunnel junction (MTJ) in a 180 nm Magnetoresistive Random Access Memory (MRAM) were investigated at the condition of the high heavy ion fluence (up to 10(10) ions center dot cm(-2)) and high gamma-ray dose (up to 15 Mrad(Si)), respectively. The Hard Bit Error (HBE) was only observed when the energy of Ta-181 ions was larger than 95.8 MeV under the ion fluence of 10(9) ions center dot cm(-2) (similar to 13 ions center dot bit(-1)). For gamma-ray exposure, no obvious effects were observed in devices. The HBE counts induced by Ta-181 ions have a strong dependence on ion energy and cumulative fluence. In addition, the annealing characteristics of HBE after heavy ion irradiation at room temperature were also observed. It is found that the high ambient temperature is able to accelerate this annealing process. Monte Carlo simulation by using TRIM program revealed that the displacement damages induced by heavy ions were mainly located in the insulating layer of MTJ, which is responsible for the occurrence of HBE. |
| WOS关键词 | MAGNETIC TUNNEL-JUNCTIONS ; RADIATION ; OXIDE |
| 资助项目 | National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11605134] |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000503907900147 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/141402]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, J. |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China 3.China Acad Space Technol, Xian 710100, Shaanxi, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, P. X.,Liu, T. Q.,Cai, C.,et al. Heavy ion irradiation induced hard error in MTJ of the MRAM memory array[J]. MICROELECTRONICS RELIABILITY,2019,100:7. |
| APA | Zhao, P. X..,Liu, T. Q..,Cai, C..,Li, D. Q..,Ji, Q. G..,...&Liu, J..(2019).Heavy ion irradiation induced hard error in MTJ of the MRAM memory array.MICROELECTRONICS RELIABILITY,100,7. |
| MLA | Zhao, P. X.,et al."Heavy ion irradiation induced hard error in MTJ of the MRAM memory array".MICROELECTRONICS RELIABILITY 100(2019):7. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。