SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell
文献类型：期刊论文
| 作者 | Cai, C.2,3; Zhao, P. X.2,3; Xu, L. W.1; Liu, T. Q.2; Li, D. Q.2,3; Ke, L. Y.2,3; He, Z.2,3; Liu, J.2
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| 刊名 | MICROELECTRONICS RELIABILITY
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| 出版日期 | 2019-09-01 |
| 卷号 | 100页码:6 |
| 关键词 | UTBB FDSOI Radiation hardened 8T SRAM Single event upset |
| ISSN号 | 0026-2714 |
| DOI | 10.1016/j.microrel.2019.06.014 |
| 通讯作者 | Liu, T. Q.(liutianqi@impcas.ac.cn) ; Liu, J.(j.liu@impcas.ac.cn) |
| 英文摘要 | FDSOI technology has attracted considerable interests in space application due to its inherent high radiation resistance. An SEU hardened 8T SRAM cell is proposed and implemented in a test memory chip with advanced 22 nm UTBB FDSOI technology. Heavy ion experimental results show that the threshold LET of SEU for proposed 8T structure cell is up to similar to 24 MeV center dot cm(2)center dot mg(-1) and less dependences of upset on data pattern and test modes are observed. Moreover, multiple bit upsets are not appeared in bitmap analysis results even under effective LET values at similar to 129 MeV center dot cm(2)center dot mg(-1). The P-bb body biasing shows low influence on SEU rates in irradiation test, while the N-bb body biasing has ability to adjust the SEU sensitivity in a certain range. The error rate prediction indicates that this nanoscale FDSOI hardened SRAM is suitable for space application in harsh radiation environment. |
| 资助项目 | National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[11675233] |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000503907900146 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/141414]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, T. Q.; Liu, J. |
| 作者单位 | 1.Fudan Univ, State Key Lab ASIC & Syst, Shanghai, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cai, C.,Zhao, P. X.,Xu, L. W.,et al. SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell[J]. MICROELECTRONICS RELIABILITY,2019,100:6. |
| APA | Cai, C..,Zhao, P. X..,Xu, L. W..,Liu, T. Q..,Li, D. Q..,...&Liu, J..(2019).SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell.MICROELECTRONICS RELIABILITY,100,6. |
| MLA | Cai, C.,et al."SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell".MICROELECTRONICS RELIABILITY 100(2019):6. |
入库方式： OAI收割
来源：近代物理研究所
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