Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology
文献类型：期刊论文
| 作者 | Cai, Chang1,2; Liu, Tianqi1,2; Zhao, Peixiong1,2 ; Fan, Xue3,4; Huang, Hongyang5; Li, Dongqing1,2; Ke, Lingyun1,2; He, Ze1,2; Xu, LieWei6; Chen, Gengsheng6
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| 刊名 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE
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| 出版日期 | 2020 |
| 卷号 | 67期号:1页码:374-381 |
| 关键词 | D filp-flops (DFFs) heavy ions radiation hardening single-event upsets (SEUs) ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FDSOI) |
| ISSN号 | 0018-9499 |
| DOI | 10.1109/TNS.2019.2956171 |
| 通讯作者 | Liu, Jie(j.liu@impcas.ac.cn) |
| 英文摘要 | The standard and layout-hardened D filp-flops (DFFs) named DFF1-6 were designed and manufactured based on an advanced 22-nm ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) technology. Heavy-ion irradiation results indicate that FD-SOI technology has contributions to radiation hardness and the hardened DFFs have higher single-event upset (SEU) tolerance than the standard DFF. The upsets induced by the embedded SET targets are strongly dependent on the testing frequency. The layout separating the dual interlocked storage cell (DICE) structure can prevent the direct occurrence of SEU in flip-flop cells, and upsets were removed completely in two-fold DICE structure DFFs. |
| WOS关键词 | SINGLE-EVENT UPSET ; TRANSIENTS |
| 资助项目 | National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233] |
| WOS研究方向 | Engineering ; Nuclear Science & Technology |
| 语种 | 英语 |
| WOS记录号 | WOS:000510824300003 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/141675]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China 3.Chengdu Technol Univ, Sch Elect Engn, Chengdu 611730, Peoples R China 4.Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China 5.Univ Elect Sci & Technol China, Chengdu 610054, Peoples R China 6.Fudan Univ, State Key Lab ASIC & Syst, Shanghai 201203, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cai, Chang,Liu, Tianqi,Zhao, Peixiong,et al. Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2020,67(1):374-381. |
| APA | Cai, Chang.,Liu, Tianqi.,Zhao, Peixiong.,Fan, Xue.,Huang, Hongyang.,...&Liu, Jie.(2020).Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,67(1),374-381. |
| MLA | Cai, Chang,et al."Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 67.1(2020):374-381. |
入库方式： OAI收割
来源：近代物理研究所
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