Graphene electrical properties modulated by swift heavy ion irradiation
文献类型：期刊论文
| 作者 | Zeng, Jian1 ; Liu, Jie1; Zhang, Shengxia1; Duan, Jinglai1; Zhai, Pengfei1; Yao, Huijun1; Hu, Peipei1,2; Maaz, Khan3; Sun, Youmei1
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| 刊名 | CARBON
 |
| 出版日期 | 2019-12-01 |
| 卷号 | 154页码:244-253 |
| ISSN号 | 0008-6223 |
| DOI | 10.1016/j.carbon.2019.08.006 |
| 通讯作者 | Zeng, Jian(zengjian@impcas.ac.cn) |
| 英文摘要 | Changes in electrical properties of graphene devices induced by the energetic ion irradiation are very important for their application in harsh radiation environment. This paper presents the modulating behavior of electrical properties of graphene-based devices induced by swift heavy ions (SHIs). Graphene field effect transistors (GFETs) were irradiated by 1.79 GeV Ta ions and it was found that at lower fluence (10(9)-10 ions/cm(2)), the SHIs irradiation can effectively optimize the performance of GFETs, while at higher fluence (similar to 10(11) ions/cm(2)), the electrical properties of the devices were significantly deteriorated after the irradiation process. The effective length and width of the graphene strip and irradiation fluence are the main factors that determine the improvement in performance of GFETs. Raman spectroscopy was employed to figure out the correlation between the initial defect density in graphene and changes in electrical performance of GFETs. It was shown that the competition among various factors such as the doping, local annealing and defect creation dominates the GFET performance. This work explores the best conditions for improving the electrical properties of GFETs and provides an important reference data for the utilization of graphene based irradiated devices in aerospace electronics. (C) 2019 Elsevier Ltd. All rights reserved. |
| WOS关键词 | RAMAN-SCATTERING ; DEFECTS ; METALS |
| 资助项目 | National Natural Science Foundation of China[11505243] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11705246] ; National Natural Science Foundation of China[11775279] ; Key Research Program of Frontier Sciences, CAS[QYZDB-SSW-SLH010] |
| WOS研究方向 | Chemistry ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000488203600029 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 资助机构 | National Natural Science Foundation of China ; Key Research Program of Frontier Sciences, CAS |
| 源URL | [http://119.78.100.186/handle/113462/141758]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zeng, Jian |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.PINSTECH, Phys Div, Nanomat Res Grp, Islamabad, Pakistan |
| 推荐引用方式 GB/T 7714 | Zeng, Jian,Liu, Jie,Zhang, Shengxia,et al. Graphene electrical properties modulated by swift heavy ion irradiation[J]. CARBON,2019,154:244-253. |
| APA | Zeng, Jian.,Liu, Jie.,Zhang, Shengxia.,Duan, Jinglai.,Zhai, Pengfei.,...&Sun, Youmei.(2019).Graphene electrical properties modulated by swift heavy ion irradiation.CARBON,154,244-253. |
| MLA | Zeng, Jian,et al."Graphene electrical properties modulated by swift heavy ion irradiation".CARBON 154(2019):244-253. |
入库方式： OAI收割
来源：近代物理研究所
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