Impacts of carbon ions on SEU in SOI SRAM
文献类型：期刊论文
| 作者 | Gao, J.1,2 ; Zhang, Q.3; Xi, K.2; Li, B.2,4; Wang, C.2; Lu, P.2; Wang, K.2; Zhang, G.2; Zhao, F.2; Li, J.2
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| 刊名 | MICROELECTRONICS RELIABILITY
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| 出版日期 | 2021-11-01 |
| 卷号 | 126页码:6 |
| ISSN号 | 0026-2714 |
| 关键词 | SEE SEU SOI SRAM C |
| DOI | 10.1016/j.microrel.2021.114341 |
| 英文摘要 | The Single Event Effect (SEE) of light ions, often neglected in reliability evaluations, is systematically investigated in this work. In this paper, the carbon ions Single Event Upset (SEU) experiment in Silicon-On-Insulator (SOI) SRAM was carried out, and the Geant4 model was established to analyze the nuclear reaction products of C+ with Si and W. The C+ SEU cross-section has been proved to be one order of magnitude larger than that of a proton with a similar energy. The SEU cross-section caused by the nuclear reaction products of C+ with Si and W, which are larger than the SEU threshold of the device, is one order of magnitude larger than the heavy-ion SEU saturated section of the device. Light ions such as C+, which is widely found in space, are potential safety hazards for aerospace electronic systems. |
| WOS关键词 | ENERGY |
| 资助项目 | Youth Innovation Promotion Association, Chinese Academy of Sciences[2019118] ; National Natural Science Foundation of China[11675013] |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
| 语种 | 英语 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| WOS记录号 | WOS:000733412800007 |
| 资助机构 | Youth Innovation Promotion Association, Chinese Academy of Sciences ; National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/141858]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zhang, Q.; Li, B. |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Microelect, Key Lab Silicon Device Technol, Beijing 100029, Peoples R China 3.China Acad Space Technol, Beijing Inst Spacecraft Syst Engn, Beijing 100094, Peoples R China 4.Guangdong Greater Bay Area Inst Integrated Circui, Guangzhou 510535, Peoples R China 5.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 6.China Inst Atom Energy, Natl Innovat Ctr Radiat Applicat, Beijing 102413, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, J.,Zhang, Q.,Xi, K.,et al. Impacts of carbon ions on SEU in SOI SRAM[J]. MICROELECTRONICS RELIABILITY,2021,126:6. |
| APA | Gao, J..,Zhang, Q..,Xi, K..,Li, B..,Wang, C..,...&Guo, G..(2021).Impacts of carbon ions on SEU in SOI SRAM.MICROELECTRONICS RELIABILITY,126,6. |
| MLA | Gao, J.,et al."Impacts of carbon ions on SEU in SOI SRAM".MICROELECTRONICS RELIABILITY 126(2021):6. |
入库方式： OAI收割
来源：近代物理研究所
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