Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response
文献类型：期刊论文
| 作者 | Chen, Jianjin2; Shen, Longhai2; Qi, Dongli2; Wu, Lijun2; Li, Xiang2; Song, Jianyu2; Zhang, Xinglai1 |
| 刊名 | CERAMICS INTERNATIONAL
 |
| 出版日期 | 2022-01-15 |
| 卷号 | 48期号:2页码:2802-2810 |
| 关键词 | Al1 xInxN films Magnetron sputtering Tunable bandgap Photodetectors |
| ISSN号 | 0272-8842 |
| DOI | 10.1016/j.ceramint.2021.10.069 |
| 通讯作者 | Shen, Longhai(shenlonghai@sylu.edu.cn) ; Zhang, Xinglai(zhangxl@imr.ac.cn) |
| 英文摘要 | Al1-xInxN films allow the bandgap to be adjusted in a wide range, which is fascinating for optoelectronic applications, especially in ultraviolet-visible and wavelength-selective photodetection. Herein, the single-phase Al1-xInxN films with tunable bandgap are synthesized via a well-designed radio-frequency (RF) magnetron sputtering method. By means of placing an In sheet on the Al target, we can control the Al and In composition in Al1-xInxN films via only changing the RF power on the target. With increasing the RF power from 100 to 300 W, the In composition (x value) in Al1-xInxN films can be adjusted from 0.94 to 0.34. Accordingly, the bandgaps are adjusted from 2.20 to 2.95 eV. Importantly, the photoresponse wavelengths of Al1-xInxN films are broadened from UV to visible light with raising the x value. The photoresponsivity of the Al1-xInxN film photodetectors is 0.0124 mA/W (x = 0.34), 0.118 mA/W (x = 0.52), and 0.126 mA/W (x = 0.67) under 365 nm, 532 nm, and 650 nm illumination, respectively. The corresponding response times are as fast as 2.37 s, 1.98 s, and 1.39 s, respectively. Our synthesis strategy of Al1-xInxN films proposed in this work will open exciting opportunities for semiconductor bandgap adjustment and wavelength-selective detection of optoelectronic devices. |
| 资助项目 | Opening Foundation of Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education[2017004] ; Basical Research Program of Educational Commission of Liaoning province[LG 201910] ; Basical Research Program of Educational Commission of Liaoning province[LG 201716] ; Natural Science Foundation Guidance Plan Project of Liaoning[2019-ZD-0254] ; Natural Science Foundation of Liaoning Province[2019-MS-333] |
| WOS研究方向 | Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000724669200002 |
| 出版者 | ELSEVIER SCI LTD |
| 资助机构 | Opening Foundation of Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education ; Basical Research Program of Educational Commission of Liaoning province ; Natural Science Foundation Guidance Plan Project of Liaoning ; Natural Science Foundation of Liaoning Province |
| 源URL | [http://ir.imr.ac.cn/handle/321006/167554]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Shen, Longhai; Zhang, Xinglai |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China 2.Shenyang Ligong Univ, Sch Sci, Shenyang 110159, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Jianjin,Shen, Longhai,Qi, Dongli,et al. Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response[J]. CERAMICS INTERNATIONAL,2022,48(2):2802-2810. |
| APA | Chen, Jianjin.,Shen, Longhai.,Qi, Dongli.,Wu, Lijun.,Li, Xiang.,...&Zhang, Xinglai.(2022).Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response.CERAMICS INTERNATIONAL,48(2),2802-2810. |
| MLA | Chen, Jianjin,et al."Bandgap tunable Al1-xInxN films for ultraviolet-visible photodetectors with wide spectral response".CERAMICS INTERNATIONAL 48.2(2022):2802-2810. |
入库方式： OAI收割
来源：金属研究所
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