Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si*
文献类型：期刊论文
| 作者 | Xu, Jian-Kai; Jiang, Li-Juan; Wang, Qian; Wang, Quan; Xiao, Hong-Ling; Feng, Chun; Li, Wei; Wang, Xiao-Liang |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2021 |
| 卷号 | 30期号:11页码:118101 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30775]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Xu, Jian-Kai; Jiang, Li-Juan; Wang, Qian; Wang, Quan; Xiao, Hong-Ling; Feng, Chun; Li, Wei; Wang, Xiao-Liang. Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si*[J]. CHINESE PHYSICS B,2021,30(11):118101. |
| APA | Xu, Jian-Kai; Jiang, Li-Juan; Wang, Qian; Wang, Quan; Xiao, Hong-Ling; Feng, Chun; Li, Wei; Wang, Xiao-Liang.(2021).Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si*.CHINESE PHYSICS B,30(11),118101. |
| MLA | Xu, Jian-Kai; Jiang, Li-Juan; Wang, Qian; Wang, Quan; Xiao, Hong-Ling; Feng, Chun; Li, Wei; Wang, Xiao-Liang."Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si*".CHINESE PHYSICS B 30.11(2021):118101. |
入库方式： OAI收割
来源：半导体研究所
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