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Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping

文献类型：期刊论文

作者Zhang, Qingtang1; Ti, Zhuoyang2; Zhu, Yuelei3; Zhang, Yongsheng2; Cao, Yang1; Li, Shuang1; Wang, Meiyu3; Li, Di2; Zou, Bo1; Hou, Yunxiang1
刊名ACS NANO
出版日期2021-12-28
卷号15
关键词resonant levels nanocrystals thermoelectric materials carrier concentration lattice thermal conductivity
ISSN号1936-0851
DOI10.1021/acsnano.1c05650
通讯作者Wang, Peng(wangpeng@nju.edu.cn) ; Tang, Guodong(tangguodong@njust.edu.cn)
英文摘要The binary compound of GeTe emerging as a potential medium-temperature thermoelectric material has drawn a great deal of attention. Here, we achieve ultralow lattice thermal conductivity and high thermoelectric performance in In and a heavy content of Cu codoped GeTe thermoelectrics. In dopants improve the density of state near the surface of Femi of GeTe by introducing resonant levels, producing a sharp increase of the Seebeck coefficient. In and Cu codoping not only optimizes carrier concentration but also substantially increases carrier mobility to a high value of 87 cm(2) V-1 s(-1 )due to the diminution of Ge vacancies. The enhanced Seebeck coefficient coupled with dramatically enhanced carrier mobility results in significant enhancement of PF in Ge1.04-x-yInxCuyTe series. Moreover, we introduce Cu2Te nanocrystals' secondary phase into GeTe by alloying a heavy content of Cu. Cu2Te nanocrystals and a high density of dislocations cause strong phonon scattering, significantly diminishing lattice thermal conductivity. The lattice thermal conductivity reduced as low as 0.31 W m(-1) K-1 at 823 K, which is not only lower than the amorphous limit of GeTe but also competitive with those of thermoelectric materials with strong lattice anharmonicity or complex crystal structures. Consequently, a high ZT of 2.0 was achieved for Ge0.9In0.015Cu0.125Te by decoupling electron and phonon transport of GeTe. This work highlights the importance of phonon engineering in advancing high-performance GeTe thermoelectrics.
WOS关键词BAND CONVERGENCE ; POLYCRYSTALLINE SNSE ; FIGURE ; MERIT ; PBTE ; EFFICIENCY ; LEADS ; SNTE
资助项目National Natural Science Foundation of China[52071182] ; Qinglan Project of the Young and Middle-aged Academic Leader of Jiangsu Province ; Fundamental Research Funds for the Central Universities[30921011107]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
语种英语
WOS记录号WOS:000751890100052
出版者AMER CHEMICAL SOC
资助机构National Natural Science Foundation of China ; Qinglan Project of the Young and Middle-aged Academic Leader of Jiangsu Province ; Fundamental Research Funds for the Central Universities
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/127554]  
专题中国科学院合肥物质科学研究院
通讯作者Wang, Peng; Tang, Guodong
作者单位1.Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, MIIT Key Lab Adv Metall & Intermetall Mat Technol, Nanjing 210094, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
3.Nanjing Univ, Innovat Ctr Adv Microstruct, Coll Engn & Appl Sci & Collaborat, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
推荐引用方式
GB/T 7714		 Zhang, Qingtang,Ti, Zhuoyang,Zhu, Yuelei,et al. Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping[J]. ACS NANO,2021,15.
APA Zhang, Qingtang.,Ti, Zhuoyang.,Zhu, Yuelei.,Zhang, Yongsheng.,Cao, Yang.,...&Tang, Guodong.(2021).Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping.ACS NANO,15.
MLA Zhang, Qingtang,et al."Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping".ACS NANO 15(2021).

入库方式： OAI收割

来源：合肥物质科学研究院

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