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Intrinsic V vacancy and large magnetoresistance in V1-delta Sb-2 single crystal

文献类型：期刊论文

作者Zhang, Yong1,2,3; Huang, Xinliang3; Zhang, Jinglei3; Gao, Wenshuai1,2; Zhu, Xiangde3; Pi, Li3
刊名CHINESE PHYSICS B
出版日期2022-03-01
卷号31
ISSN号1674-1056
关键词binary pnictide semimetals vanadium vacancy flat band weak anti-localization
DOI10.1088/1674-1056/ac3070
通讯作者Gao, Wenshuai(gwsh@ahu.edu.cn) ; Zhu, Xiangde(xdzhu@hmfl.ac.cn)
英文摘要The binary pnictide semimetals have attracted considerable attention due to their fantastic physical properties that include topological effects, negative magnetoresistance, Weyl fermions, and large non-saturation magnetoresistance. In this paper, we have successfully grown the high-quality V1 - delta Sb-2 single crystals by Sb flux method and investigated their electronic transport properties. A large positive magnetoresistance that reaches 477% under a magnetic field of 12 T at T = 1.8 K was observed. Notably, the magnetoresistance showed a cusp-like feature at the low magnetic fields and such feature weakened gradually as the temperature increased, which indicated the presence of a weak antilocalization effect (WAL). In addition, based upon the experimental and theoretical band structure calculations, V1 - delta Sb-2 is a research candidate for a flat band.
WOS关键词VSB2
资助项目National Natural Science Foundation of China[U2032214] ; National Natural Science Foundation of China[U2032163] ; National Natural Science Foundation of China[11904002] ; Youth Innovation Promotion Association of Chinese Academy of Sciences[2017483] ; Natural Science Foundation of Anhui Province, China[1908085QA15]
WOS研究方向Physics
语种英语
出版者IOP Publishing Ltd
WOS记录号WOS:000762497000001
资助机构National Natural Science Foundation of China ; Youth Innovation Promotion Association of Chinese Academy of Sciences ; Natural Science Foundation of Anhui Province, China
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/127966]  
专题中国科学院合肥物质科学研究院
通讯作者Gao, Wenshuai; Zhu, Xiangde
作者单位1.Anhui Univ, Inst Phys Sci, Hefei 230601, Peoples R China
2.Anhui Univ, Inst Informat Technol, Hefei 230601, Peoples R China
3.Chinese Acad Sci, High Magnet Field Lab, Anhui Prov Key Lab Condensed Matter Phys Extreme, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714		 Zhang, Yong,Huang, Xinliang,Zhang, Jinglei,et al. Intrinsic V vacancy and large magnetoresistance in V1-delta Sb-2 single crystal[J]. CHINESE PHYSICS B,2022,31.
APA Zhang, Yong,Huang, Xinliang,Zhang, Jinglei,Gao, Wenshuai,Zhu, Xiangde,&Pi, Li.(2022).Intrinsic V vacancy and large magnetoresistance in V1-delta Sb-2 single crystal.CHINESE PHYSICS B,31.
MLA Zhang, Yong,et al."Intrinsic V vacancy and large magnetoresistance in V1-delta Sb-2 single crystal".CHINESE PHYSICS B 31(2022).

入库方式： OAI收割

来源：合肥物质科学研究院

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