Evidence of defect-annealing effect in swift heavy-ion-irradiated indium phosphide
文献类型：期刊论文
| 作者 | Hu, Peipei1; Xu, Lijun1 ; Zhai, Pengfei1,2; Zeng, Jian1,2; Zhang, Shengxia1,2; Maaz, Khan3; Ai, Wensi1,2; Li, Zongzhen1; Sun, Youmei1,2; He, Yuan1,2
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| 刊名 | JOURNAL OF RAMAN SPECTROSCOPY
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| 出版日期 | 2022-03-03 |
| 页码 | 9 |
| ISSN号 | 0377-0486 |
| 关键词 | defect-annealing heavy ions InP Raman intensity |
| DOI | 10.1002/jrs.6324 |
| 通讯作者 | Liu, Jie(j.liu@impcas.ac.cn) |
| 英文摘要 | Single-crystal indium phosphide (InP) was irradiated by swift heavy ions (Ar-40, Fe-56, Kr-86, Ta-181, and Bi-209) with different energies. The damage evolutions have been investigated by means of Raman spectroscopy and electron microscopy. Analysis of Raman intensity ratio (LO ' peak to LO peak [I-LO '/I-LO]) provides a new insight into the lattice quality of the irradiated samples. The defect-activated longitudinal optical mode (LO ') appeared and then disappeared with increasing ion fluences, and it seems that the peak point of I-LO '/I-LO is electronic energy loss dependent. The phenomenological model suggests that the LO ' peak intensity is positively correlated with the proportion of the activated regions, where the crystals were not completely disordered, but still many defects were created. Furthermore, the TEM images showed that the tracks closely overlapped, resulting in the decrease of activated regions, which implies that there is a competitive mechanism between the generation and annealing of the defects. It also provides direct evidence that the annealing effect of the defects has occurred during the swift heavy-ion irradiation. |
| WOS关键词 | RAMAN-SCATTERING ; TRACK FORMATION ; PICOSECOND RAMAN ; DAMAGE FORMATION ; CRYSTALLINE INP ; GAAS ; EVOLUTION ; SPECTRUM ; SI |
| 资助项目 | Chinese Academy of Sciences[2020412] ; China Postdoctoral Science Foundation[2020M673539] ; National Postdoctoral Program for Innovative Talents[BX20200340] ; National Natural Science Foundation of China[12035019] ; National Natural Science Foundation of China[12075290] |
| WOS研究方向 | Spectroscopy |
| 语种 | 英语 |
| 出版者 | WILEY |
| WOS记录号 | WOS:000763735500001 |
| 资助机构 | Chinese Academy of Sciences ; China Postdoctoral Science Foundation ; National Postdoctoral Program for Innovative Talents ; National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/141903]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, Jie |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Univ Chinese Acad Sci UCAS, Sch Nucl Sci & Technol, Beijing, Peoples R China 3.PINSTECH, Phys Div, Islamabad, Pakistan |
| 推荐引用方式 GB/T 7714 | Hu, Peipei,Xu, Lijun,Zhai, Pengfei,et al. Evidence of defect-annealing effect in swift heavy-ion-irradiated indium phosphide[J]. JOURNAL OF RAMAN SPECTROSCOPY,2022:9. |
| APA | Hu, Peipei.,Xu, Lijun.,Zhai, Pengfei.,Zeng, Jian.,Zhang, Shengxia.,...&Liu, Jie.(2022).Evidence of defect-annealing effect in swift heavy-ion-irradiated indium phosphide.JOURNAL OF RAMAN SPECTROSCOPY,9. |
| MLA | Hu, Peipei,et al."Evidence of defect-annealing effect in swift heavy-ion-irradiated indium phosphide".JOURNAL OF RAMAN SPECTROSCOPY (2022):9. |
入库方式： OAI收割
来源：近代物理研究所
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