Design, Application, and Verification of the Novel SEU Tolerant Abacus-Type Layouts
文献类型：期刊论文
| 作者 | Sun, Yi1; Li, Zhi2; He, Ze3; Chi, Yaqing4 |
| 刊名 | ELECTRONICS
 |
| 出版日期 | 2021-12-01 |
| 卷号 | 10期号:23页码:11 |
| 关键词 | D flip-flop double interlocked storage cell single event upset |
| DOI | 10.3390/electronics10233017 |
| 通讯作者 | Chi, Yaqing(yqchi@nudt.edu.cn) |
| 英文摘要 | Radiation tolerance improvements for advanced technologies have attracted considerable interests in space application. In this paper, the single event upset (SEU) hardened double interlocked storage cell (DICE) D-type flip-flops (DFFs) with abacus-type time-delay cell are proposed and successfully implemented in our test chips. The layout structures of two kinds of abacus-type time-delay cells are illustrated, and their hardening effectiveness are verified by our simulations and heavy ion irradiations. The systematic heavy ion experimental results show that the applied abacus-type time-delay cells can reduce the SEU cross sections of DICE DFFs significantly, and even the SEU immune is observed for the full "0" data pattern. Besides, an apparent test mode dependency of the abacus-type hardened circuits is also observed. The results indicate that the nanoscale abacus structure may be suitable for space application in harsh radiation environment. |
| WOS关键词 | SINGLE-EVENT TRANSIENTS ; FLIP-FLOP ; SRAM CELL ; TECHNOLOGY |
| 资助项目 | National Natural Science Foundation of China[61704192] ; National Natural Science Foundation of China[62004221] ; National Natural Science Foundation of China[62174180] ; National Natural Science Foundation of China[11805271] |
| WOS研究方向 | Computer Science ; Engineering ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000762147100001 |
| 出版者 | MDPI |
| 资助机构 | National Natural Science Foundation of China |
| 源URL | [http://119.78.100.186/handle/113462/141924]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Chi, Yaqing |
| 作者单位 | 1.China Acad Space Technol, China Aerosp Components Engn Ctr, Beijing 100028, Peoples R China 2.China Acad Space Technol, Beijing Inst Control Engn, Beijing 100190, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 4.Natl Univ Def Technol, Coll Comp, Changsha 410000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun, Yi,Li, Zhi,He, Ze,et al. Design, Application, and Verification of the Novel SEU Tolerant Abacus-Type Layouts[J]. ELECTRONICS,2021,10(23):11. |
| APA | Sun, Yi,Li, Zhi,He, Ze,&Chi, Yaqing.(2021).Design, Application, and Verification of the Novel SEU Tolerant Abacus-Type Layouts.ELECTRONICS,10(23),11. |
| MLA | Sun, Yi,et al."Design, Application, and Verification of the Novel SEU Tolerant Abacus-Type Layouts".ELECTRONICS 10.23(2021):11. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。