Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors
文献类型：期刊论文
| 作者 | Lin, Zheng-Zhao1; Lu, Ling1; Zheng, Xue-Feng1; Cao, Yan-Rong2; Hu, Pei-Pei3; Fang, Xin1; Ma, Xiao-Hua1 |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2022-02-01 |
| 卷号 | 31期号:3页码:6 |
| ISSN号 | 1674-1056 |
| 关键词 | gallium nitride radiation effects defects pulse testing |
| DOI | 10.1088/1674-1056/ac11e4 |
| 通讯作者 | Lu, Ling(llv@xidian.edu.cn) |
| 英文摘要 | AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with heavy ions at various fluences. After irradiation by 2.1 GeV181 Ta32+ ions, the electrical characteristics of the devices significantly decreased. The threshold voltage shifted positively by approximately 25% and the saturation currents decreased by approximately 14%. Defects were induced in the band gap and the interface between the gate and barrier acted as tunneling sites, which increased the gate current tunneling probability. According to the pulsed output characteristics, the amount of current collapse significantly increased and more surface state traps were introduced after heavy ion irradiation. The time constants of the induced surface traps were mainly less than 10 mu s. |
| WOS关键词 | CURRENT COLLAPSE ; GAN ; HEMTS ; PERFORMANCE ; DEFECTS ; DC |
| 资助项目 | National Natural Science Foundation of China[12035019] ; National Natural Science Foundation of China[11690042] ; Science Challenge Projects[TZ2018004] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| 出版者 | IOP Publishing Ltd |
| WOS记录号 | WOS:000760518000001 |
| 资助机构 | National Natural Science Foundation of China ; Science Challenge Projects |
| 源URL | [http://119.78.100.186/handle/113462/142050]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Lu, Ling |
| 作者单位 | 1.Xidian Univ, Sch Microelect, Xian 710071, Peoples R China 2.Xidian Univ, Sch Mechanoelect Engn, Xian 710071, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lin, Zheng-Zhao,Lu, Ling,Zheng, Xue-Feng,et al. Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors[J]. CHINESE PHYSICS B,2022,31(3):6. |
| APA | Lin, Zheng-Zhao.,Lu, Ling.,Zheng, Xue-Feng.,Cao, Yan-Rong.,Hu, Pei-Pei.,...&Ma, Xiao-Hua.(2022).Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors.CHINESE PHYSICS B,31(3),6. |
| MLA | Lin, Zheng-Zhao,et al."Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors".CHINESE PHYSICS B 31.3(2022):6. |
入库方式： OAI收割
来源：近代物理研究所
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