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Molecular dynamics simulation of the behavior of typical radiation defects under stress gradient field in tungsten

文献类型：期刊论文

作者Fang, Jingzhong1; Liu, Lixia2; Gao, Ning3,4; Hu, Wangyu2; Deng, Huiqiu1
刊名JOURNAL OF APPLIED PHYSICS
出版日期2021-09-28
卷号130期号:12页码:9
ISSN号0021-8979
DOI10.1063/5.0059748
通讯作者Gao, Ning(ning.gao@sdu.edu.cn) ; Deng, Huiqiu(hqdeng@hnu.edu.cn)
英文摘要In the fusion environment, a complex stress field is generated in materials, which affects the evolution of radiation defects. In this study, the behaviors of radiation-induced defects under the effect of stress gradient field in tungsten are carefully simulated at the atomic scale with the molecular dynamics (MD) method. It was found that the stress gradient field affects the migration properties of interstitial defects, resulting in the energy barriers changing with the stress and stress gradient. In the axial stress gradient field, the movement of the 1/2 < 111 > interstitial dislocation loop is significantly accelerated, and it tends to move toward the region where the stress is concentrated. Within the time scale of the classical MD simulation, the stress gradient has little effect on the migration of vacancies. These results suggested that the stress gradient would cause interstitial defects to accumulate to the region where the stress is concentrated, thereby significantly changing the properties of the tungsten materials.& nbsp;Published under an exclusive license by AIP Publishing.
WOS关键词PLASMA-FACING COMPONENTS ; INTERATOMIC POTENTIALS ; AB-INITIO ; MICROSTRUCTURAL DEVELOPMENT ; NEUTRON-IRRADIATION ; RE ; HE ; INTERSTITIALS ; VACANCIES ; CLUSTERS
资助项目National Natural Science Foundation of China[12075141] ; National Natural Science Foundation of China[11375242] ; National Natural Science Foundation of China[51771073] ; National Natural Science Foundation of China[11675230]
WOS研究方向Physics
语种英语
WOS记录号WOS:000724607700002
出版者AIP Publishing
资助机构National Natural Science Foundation of China
源URL[http://119.78.100.186/handle/113462/142474]  
专题中国科学院近代物理研究所
通讯作者Gao, Ning; Deng, Huiqiu
作者单位1.Hunan Univ, Sch Phys & Elect, Changsha 410082, Peoples R China
2.Hunan Univ, Coll Mat Sci & Engn, Changsha 410082, Peoples R China
3.Shandong Univ, Inst Frontier & Interdisciplinary Sci, Qingdao, Peoples R China
4.Shandong Univ, Key Lab Particle Phys & Particle Irradiat MOE, Qingdao, Peoples R China
5.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Fang, Jingzhong,Liu, Lixia,Gao, Ning,et al. Molecular dynamics simulation of the behavior of typical radiation defects under stress gradient field in tungsten[J]. JOURNAL OF APPLIED PHYSICS,2021,130(12):9.
APA Fang, Jingzhong,Liu, Lixia,Gao, Ning,Hu, Wangyu,&Deng, Huiqiu.(2021).Molecular dynamics simulation of the behavior of typical radiation defects under stress gradient field in tungsten.JOURNAL OF APPLIED PHYSICS,130(12),9.
MLA Fang, Jingzhong,et al."Molecular dynamics simulation of the behavior of typical radiation defects under stress gradient field in tungsten".JOURNAL OF APPLIED PHYSICS 130.12(2021):9.

入库方式： OAI收割

来源：近代物理研究所

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