Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors
文献类型:期刊论文
作者 | Feng, J (Feng, Jie) [1] , [2]; Fu, J (Fu, Jing) [1] , [2] , [3]; Li, YD (Li, Yu-Dong) [1] , [2]![]() ![]() ![]() |
刊名 | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
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出版日期 | 2021 |
卷号 | 16期号:11页码:1755-1761 |
关键词 | CMOS Color Image Sensor Ionization Damage Radiation-Sensitive Parameters |
ISSN号 | 1555-130X |
DOI | 10.1166/jno.2021.3136 |
英文摘要 | To study the degradation of remote-sensing cameras in terms of responsivity, dynamic range, and imaging performance due to exposure to space radiation, a y-irradiation experiment was performed on a large eight transistor (8T) complementary metal-oxide-semiconductor (CMOS) color image sensor. An in-depth investigation was thus conducted on the mechanisms by which ionization damage degrades radiation-sensitive parameters (i.e., dark current, dark signal non-uniformity, output signal, saturated output, and responsivity) of an image sensor, in its red, green, and blue channels. The findings of this study will serve as a theoretical and technical basis for the design of large radiation-hardened 8T-CMOS image sensors for space-based remote-sensing satellites. |
WOS记录号 | WOS:000755789600006 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/8163] ![]() |
专题 | 新疆理化技术研究所_新疆维吾尔自治区电子信息材料与器件重点实验室 固体辐射物理研究室 |
作者单位 | 1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China 3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China |
推荐引用方式 GB/T 7714 | Feng, J ,Fu, J ,Li, YD ,et al. Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors[J]. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS,2021,16(11):1755-1761. |
APA | Feng, J ,Fu, J ,Li, YD ,Wen, L ,&Guo, Q .(2021).Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors.JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS,16(11),1755-1761. |
MLA | Feng, J ,et al."Mechanism of Ionization Damage in Large Eight-Transistor Complementary Metal-Oxide-Semiconductor Color Image Sensors".JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 16.11(2021):1755-1761. |
入库方式: OAI收割
来源:新疆理化技术研究所
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