Transfer-free graphene-guided high-quality epitaxy of AlN film for deep ultraviolet light-emitting diodes
文献类型：期刊论文
| 作者 | Chang, Hongliang; Shan, Jingyuan; Liang, Dongdong; Gao, Yaqi; Wang, Lulu; Wang, Junxi; Sun, Jingyu; Wei, Tongbo |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2021 |
| 卷号 | 130期号:19页码:193103 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30782]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Chang, Hongliang; Shan, Jingyuan; Liang, Dongdong; Gao, Yaqi; Wang, Lulu; Wang, Junxi; Sun, Jingyu; Wei, Tongbo. Transfer-free graphene-guided high-quality epitaxy of AlN film for deep ultraviolet light-emitting diodes[J]. JOURNAL OF APPLIED PHYSICS,2021,130(19):193103. |
| APA | Chang, Hongliang; Shan, Jingyuan; Liang, Dongdong; Gao, Yaqi; Wang, Lulu; Wang, Junxi; Sun, Jingyu; Wei, Tongbo.(2021).Transfer-free graphene-guided high-quality epitaxy of AlN film for deep ultraviolet light-emitting diodes.JOURNAL OF APPLIED PHYSICS,130(19),193103. |
| MLA | Chang, Hongliang; Shan, Jingyuan; Liang, Dongdong; Gao, Yaqi; Wang, Lulu; Wang, Junxi; Sun, Jingyu; Wei, Tongbo."Transfer-free graphene-guided high-quality epitaxy of AlN film for deep ultraviolet light-emitting diodes".JOURNAL OF APPLIED PHYSICS 130.19(2021):193103. |
入库方式： OAI收割
来源：半导体研究所
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