中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells

文献类型:期刊论文

作者Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Chen, Ping;   Yang, Jing;   Liu, Zongshun
刊名JOURNAL OF ALLOYS AND COMPOUNDS
出版日期2021
卷号874页码:159851
公开日期2021
源URL[http://ir.semi.ac.cn/handle/172111/30874]  
专题半导体研究所_光电子研究发展中心
推荐引用方式
GB/T 7714
Hou, Yufei; Liang, Feng; Zhao, Degang; Chen, Ping; Yang, Jing; Liu, Zongshun. Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2021,874:159851.
APA Hou, Yufei; Liang, Feng; Zhao, Degang; Chen, Ping; Yang, Jing; Liu, Zongshun.(2021).Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells.JOURNAL OF ALLOYS AND COMPOUNDS,874,159851.
MLA Hou, Yufei; Liang, Feng; Zhao, Degang; Chen, Ping; Yang, Jing; Liu, Zongshun."Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells".JOURNAL OF ALLOYS AND COMPOUNDS 874(2021):159851.

入库方式: OAI收割

来源:半导体研究所

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