Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhang, Yuheng; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2021 |
| 卷号 | 36期号:10页码:105010 |
| 公开日期 | 2021 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/30866]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Zhang, Yuheng; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun. Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,36(10):105010. |
| APA | Zhang, Yuheng; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun.(2021).Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,36(10),105010. |
| MLA | Zhang, Yuheng; Yang, Jing; Zhao, Degang; Liang, Feng; Chen, Ping; Liu, Zongshun."Adjustment of Al atom migration ability and its effect on the surface morphology of AlN grown on sapphire by metal–organic chemical vapor deposition".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36.10(2021):105010. |
入库方式： OAI收割
来源：半导体研究所
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